Inventor · disambiguated record
Man-Ho Kwan
Also filed as: KWAN MAN HO
17 granted patents·5 pending applications·42 citations·filing 2013–2025
91Inventor score
Top patents by PatentIndex Score
22 records- 0197US11854909B2Semiconductor structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0296US11824109B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
- 0394US10411681B2Semiconductor device and circuit protecting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 10, 2019·11 cites·20 claims
- 0493US9882553B2Semiconductor device and circuit protecting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·11 cites·20 claims
- 0588US10319644B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·3 cites·20 claims
- 0686US9627275B1Hybrid semiconductor structure on a common substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·3 cites·19 claims
- 0785US11522077B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 0881US12272741B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0981US2025240996A1Integration of p-channel and n-channel e-fet iii-v devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1080US9160326B2Gate protected semiconductor devicesUNIV HONG KONG SCIENCE & TECHN·Filed 2013·Granted Oct 13, 2015·6 cites·17 claims
- 1180US2023299133A1Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1276US2025323218A13d semiconductor structure for wide-bandgap semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1374US10276657B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·20 claims
- 1473US11705486B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 18, 2023·0 cites·20 claims
- 1573US10068976B2Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 4, 2018·2 cites·20 claims
- 1669US11843047B2Integration of p-channel and n-channel E-FET III-V devices without parasitic channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 1767US2024014176A13d semiconductor structure for wide-bandgap semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1866US11430702B2Semiconductor structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·0 cites·20 claims
- 1965US10854711B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 2063US10522618B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 2161US11349023B2Integration of p-channel and n-channel E-FET III-V devices without parasitic channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·0 cites·20 claims
- 2257US2025245931A1Labeling methods and systems for 3d point cloud segmentationLIDARIST COMPANY LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →