Inventor · disambiguated record
Mark Loboda
Also filed as: LOBODA MARK · LOBODA MARK J · LOBODA MARK JON
36 granted patents·9 pending applications·1,202 citations·filing 1990–2022
98Inventor score
Top patents by PatentIndex Score
45 records- 0198US9738991B2Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansionDOW CORNING·Filed 2013·Granted Aug 22, 2017·14 cites·10 claims
- 0296US6159871AMethod for producing hydrogenated silicon oxycarbide films having low dielectric constantDOW CORNING·Filed 1998·Granted Dec 12, 2000·365 cites·20 claims
- 0395US7736728B2Coated substrates and methods for their preparationDOW CORNING·Filed 2005·Granted Jun 15, 2010·64 cites·10 claims
- 0495US5465680AMethod of forming crystalline silicon carbide coatingsDOW CORNING·Filed 1993·Granted Nov 14, 1995·101 cites·16 claims
- 0594US9165779B2Flat SiC semiconductor substrateDOW CORNING·Filed 2015·Granted Oct 20, 2015·10 cites·14 claims
- 0694US9018639B2Flat SiC semiconductor substrateDOW CORNING·Filed 2013·Granted Apr 28, 2015·15 cites·8 claims
- 0794US5818071ASilicon carbide metal diffusion barrier layerDOW CORNING·Filed 1995·Granted Oct 6, 1998·165 cites·15 claims
- 0893US8940614B2SiC substrate with SiC epitaxial filmDOW CORNING·Filed 2014·Granted Jan 27, 2015·15 cites·20 claims
- 0993US6593655B1Method for producing hydrogenated silicon oxycarbide films having low dielectric constantDOW CORNING·Filed 2000·Granted Jul 15, 2003·81 cites·17 claims
- 1090US10002760B2Method for manufacturing SiC wafer fit for integration with power device manufacturing technologyDOW CORNING·Filed 2016·Granted Jun 19, 2018·8 cites·24 claims
- 1190US6667553B2H:SiOC coated substratesDOW CORNING·Filed 2001·Granted Dec 23, 2003·57 cites·12 claims
- 1288US9337277B2High voltage power semiconductor device on SiCDOW CORNING·Filed 2014·Granted May 10, 2016·7 cites·20 claims
- 1387US9797064B2Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansionDOW CORNING·Filed 2013·Granted Oct 24, 2017·10 cites·9 claims
- 1487US8860040B2High voltage power semiconductor devices on SiCDOW CORNING·Filed 2013·Granted Oct 14, 2014·7 cites·10 claims
- 1587US5693565ASemiconductor chips suitable for known good die testingDOW CORNING·Filed 1996·Granted Dec 2, 1997·97 cites·11 claims
- 1686US9279192B2Method for manufacturing SiC wafer fit for integration with power device manufacturing technologyDOW CORNING·Filed 2014·Granted Mar 8, 2016·8 cites·24 claims
- 1786US5415126AMethod of forming crystalline silicon carbide coatings at low temperaturesDOW CORNING·Filed 1993·Granted May 16, 1995·45 cites·18 claims
- 1880US9017804B2Method to reduce dislocations in SiC crystal growthDOW CORNING·Filed 2013·Granted Apr 28, 2015·1 cites·23 claims
- 1978US6593248B2Method for producing hydrogenated silicon oxycarbide films having low dielectric constantDOW CORNING·Filed 2002·Granted Jul 15, 2003·22 cites·21 claims
- 2071US8765091B2Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processesLOBODA MARK·Filed 2008·Granted Jul 1, 2014·3 cites·12 claims
- 2170US2023167582A1SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAMEPALLIDUS INC·Filed 2022·Application pending·0 cites
- 2270US2023167583A1SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAMEPALLIDUS INC·Filed 2022·Application pending·0 cites
- 2370US2023167580A1SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAMEPALLIDUS INC·Filed 2022·Application pending·0 cites
- 2469US11131038B2Furnace for seeded sublimation of wide band gap crystalsSK SILTRON CSS LLC·Filed 2019·Granted Sep 28, 2021·0 cites·10 claims
- 2569US10106912B2Reaction cell for growing SiC crystal with low dislocation densityDOW CORNING·Filed 2017·Granted Oct 23, 2018·0 cites·20 claims
- 2668US10435810B2Graphite crucible for sublimation growth of SiC crystalDOW CORNING·Filed 2017·Granted Oct 8, 2019·1 cites·19 claims
- 2768US5380553AReverse direction pyrolysis processingDOW CORNING·Filed 1990·Granted Jan 10, 1995·27 cites·10 claims
- 2865US9337027B2Method of manufacturing substrates having improved carrier lifetimesDOW CORNING·Filed 2013·Granted May 10, 2016·1 cites·9 claims
- 2964US10344396B2Furnace for seeded sublimation of wide band gap crystalsDOW CORNING·Filed 2016·Granted Jul 9, 2019·0 cites·12 claims
- 3060US7622193B2Coated substrates and methods for their preparationDOW CORNING·Filed 2005·Granted Nov 24, 2009·1 cites·7 claims
- 3159US7189664B2Method for producing hydrogenated silicon-oxycarbide filmsDOW CORNING·Filed 2004·Granted Mar 13, 2007·3 cites·23 claims
- 3259US5436029ACuring silicon hydride containing materials by exposure to nitrous oxideDOW CORNING·Filed 1992·Granted Jul 25, 1995·33 cites·17 claims
- 3356US6268262B1Method for forming air bridgesDOW CORNING·Filed 1997·Granted Jul 31, 2001·21 cites·11 claims
- 3454US2010092781A1Roll-To-Roll Plasma Enhanced Chemical Vapor Deposition Method of Barrier Layers Comprising Silicon And CarbonDOW CORNING·Filed 2009·Application pending·0 cites
- 3552US8343854B2Method of reducing memory effects in semiconductor epitaxyDOW CORNING·Filed 2009·Granted Jan 1, 2013·0 cites·12 claims
- 3650US12187617B2Method and apparatus for removal of surface carbon from polysiliconHEMLOCK SEMICONDUCTOR OPERATIONS LLC·Filed 2020·Granted Jan 7, 2025·0 cites·17 claims
- 3750US2010006859A1Method of Manufacturing Substrates Having Improved Carrier LifetimesCHUNG GILYONG·Filed 2007·Application pending·0 cites
- 3846US2004166692A1Method for producing hydrogenated silicon oxycarbide filmsLOBODA MARK JON·Filed 2003·Application pending·0 cites
- 3944US2010178490A1Roll-to-roll plasma enhanced chemical vapor deposition method of barrier layers comprising silicon and carbonCERNY GLENN·Filed 2008·Application pending·0 cites
- 4043US5820923ACuring silica precursors by exposure to nitrous oxideDOW CORNING·Filed 1992·Granted Oct 13, 1998·13 cites·11 claims
- 4141US2002137323A1Metal ion diffusion barrier layersFiled 2002·Application pending·0 cites
- 4240US2006158101A1Organic light-emitting diodeDOW CORNING·Filed 2004·Application pending·0 cites
- 4339US9187602B2Heteroelement siloxane compounds and polymersKATSOULIS DIMITRIS ELIAS·Filed 2008·Granted Nov 17, 2015·0 cites·5 claims
- 4434US5501875AMetal coated silica precursor powdersDOW CORNING·Filed 1994·Granted Mar 26, 1996·3 cites·17 claims
- 4531US5863595AThick ceramic coatings for electronic devicesDOW CORNING·Filed 1997·Granted Jan 26, 1999·4 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →