Inventor · disambiguated record
Mamoru Maeda
Also filed as: MAEDA MAMORU
19 granted patents·810 citations·filing 1978–2003
96Inventor score
Top patents by PatentIndex Score
19 records- 0198US4625678AApparatus for plasma chemical vapor depositionFUJITSU LTD·Filed 1985·Granted Dec 2, 1986·272 cites·6 claims
- 0290US4804560AMethod of selectively depositing tungsten upon a semiconductor substrateFUJITSU LTD·Filed 1987·Granted Feb 14, 1989·125 cites·2 claims
- 0390US4394401AMethod of plasma enhanced chemical vapor deposition of phosphosilicate glass filmFUJITSU LTD·Filed 1981·Granted Jul 19, 1983·77 cites·10 claims
- 0477US5148259ASemiconductor device having thin film wiring layer of aluminum containing carbonFUJITSU LTD·Filed 1991·Granted Sep 15, 1992·59 cites·11 claims
- 0576US5270224AMethod of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1992·Granted Dec 14, 1993·41 cites·5 claims
- 0675US5111266ASemiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1991·Granted May 5, 1992·38 cites·9 claims
- 0773US7038228B2Image forming apparatus with specific document determining module and abnormality detection meansRICOH KK·Filed 2003·Granted May 2, 2006·9 cites·4 claims
- 0871US4363868AProcess of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation processFUJITSU LTD·Filed 1980·Granted Dec 14, 1982·32 cites·4 claims
- 0970US4366506APicture transfer method and apparatus thereforRICOH KK·Filed 1981·Granted Dec 28, 1982·20 cites·2 claims
- 1068US4293590AProcess for high pressure oxidation of siliconFUJITSU LTD·Filed 1980·Granted Oct 6, 1981·23 cites·7 claims
- 1166US5518937ASemiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1995·Granted May 21, 1996·26 cites·2 claims
- 1266US4271436ADigital copying machineRICOH KK·Filed 1979·Granted Jun 2, 1981·16 cites·6 claims
- 1362US4275094AProcess for high pressure oxidation of siliconFUJITSU LTD·Filed 1978·Granted Jun 23, 1981·14 cites·14 claims
- 1458US6949757B2Specific document determining apparatus including a microwave sensorRICOH KK·Filed 2003·Granted Sep 27, 2005·3 cites·19 claims
- 1557US4263087AProcess for producing epitaxial layersFUJITSU LTD·Filed 1980·Granted Apr 21, 1981·22 cites·9 claims
- 1648US4513026AMethod for coating a semiconductor device with a phosphosilicate glassFUJITSU LTD·Filed 1983·Granted Apr 23, 1985·15 cites·9 claims
- 1747US4293589AProcess for high pressure oxidation of siliconFUJITSU LTD·Filed 1980·Granted Oct 6, 1981·10 cites·16 claims
- 1840US6025603ASpecific document determining apparatus, image reading apparatus, specific document determining method, and a computer-readable recording medium with a program for execution of the method stored therein image reading apparatus having a specific documentRICOH KK·Filed 1997·Granted Feb 15, 2000·8 cites·50 claims
- 1929US6696696B1Image forming apparatus with specific document module having a microwave sensorRICOH KK·Filed 1999·Granted Feb 24, 2004·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →