Inventor · disambiguated record
Masashi Maekawa
Also filed as: MAEKAWA MASASHI
19 granted patents·716 citations·filing 1982–2010
96Inventor score
Files withSHARP LAB OF AMERICA INC10SHARP KK3ICHIKOH INDUSTRIES LTD2KABUSHIKI KAISYA OHARA2AGENCY IND SCIENCE TECHN1
Top patents by PatentIndex Score
19 records- 0194US6784455B2Single crystal TFT from continuous transition metal delivery methodSHARP LAB OF AMERICA INC·Filed 2002·Granted Aug 31, 2004·75 cites·11 claims
- 0292US5005797ADoor mirror for vehiclesICHIKOH INDUSTRIES LTD·Filed 1988·Granted Apr 9, 1991·94 cites·5 claims
- 0389US6066547AThin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing methodSHARP LAB OF AMERICA INC·Filed 1997·Granted May 23, 2000·92 cites·18 claims
- 0486US6620661B2Single crystal TFT from continuous transition metal delivery methodSHARP LAB OF AMERICA INC·Filed 2002·Granted Sep 16, 2003·31 cites·29 claims
- 0586US6346437B1Single crystal TFT from continuous transition metal delivery methodSHARP LAB OF AMERICA INC·Filed 1998·Granted Feb 12, 2002·51 cites·32 claims
- 0680US5561089AGlass-ceramic for information recording diskKABUSHIKI KAISYA OHARA·Filed 1995·Granted Oct 1, 1996·54 cites·3 claims
- 0777US5868953AMethod for manufacturing a magnetic disk substrateKABUSHIKI KAISYA OHARA·Filed 1995·Granted Feb 9, 1999·40 cites·8 claims
- 0877US4506315AVehicle headlampICHIKOH INDUSTRIES LTD·Filed 1982·Granted Mar 19, 1985·35 cites·7 claims
- 0973US5814835ASemiconductor device and method for fabricating the sameSHARP KK·Filed 1995·Granted Sep 29, 1998·44 cites·9 claims
- 1072US6225197B1Method of forming polycrystalline film by steps including introduction of nickel and rapid thermal annealSHARP LAB OF AMERICA INC·Filed 1999·Granted May 1, 2001·35 cites·6 claims
- 1172US5940693ASelective silicide thin-film transistor and method for sameSHARP LAB OF AMERICA INC·Filed 1997·Granted Aug 17, 1999·36 cites·20 claims
- 1270US7153359B2Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereofSHARP KK·Filed 2002·Granted Dec 26, 2006·16 cites·32 claims
- 1370US6242779B1Selective silicide thin-film transistor having polysilicon active layers with crystallizing metal agent introduced only in the source/drain regionsSHARP LAB OF AMERICA INC·Filed 1999·Granted Jun 5, 2001·31 cites·10 claims
- 1469US6396104B2Thin film transistor in metal-induced crystallized region formed around a transition metal nucleus siteSHARP LAB OF AMERICA INC·Filed 2001·Granted May 28, 2002·11 cites·3 claims
- 1559US6228693B1Selected site, metal-induced, continuous crystallization methodSHARP LAB OF AMERICA INC·Filed 1998·Granted May 8, 2001·20 cites·21 claims
- 1658US5950078ARapid thermal annealing with absorptive layers for thin film transistors on transparent substratesSHARP LAB OF AMERICA INC·Filed 1997·Granted Sep 7, 1999·21 cites·32 claims
- 1755US8466048B2Selective recrystallization of semiconductorITOH YOSHIYUKI·Filed 2010·Granted Jun 18, 2013·1 cites·2 claims
- 1855US4719183AForming single crystal silicon on insulator by irradiating a laser beam having dual peak energy distribution onto polysilicon on a dielectric substrate having stepsSHARP KK·Filed 1985·Granted Jan 12, 1988·22 cites·7 claims
- 1935US4801351AMethod of manufacturing monocrystalline thin-filmAGENCY IND SCIENCE TECHN·Filed 1986·Granted Jan 31, 1989·7 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →