Inventor · disambiguated record
Mauricio Manfrini
Also filed as: MANFRINI MAURICIO
121 granted patents·45 pending applications·81 citations·filing 2014–2025
99Inventor score
Top patents by PatentIndex Score
166 records- 0199US11569250B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·6 cites·20 claims
- 0298US11943933B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·3 cites·20 claims
- 0398US11355496B2High-density 3D-dram cell with scaled capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·5 cites·20 claims
- 0498US11309353B2Spacer-defined back-end transistor as memory selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·7 cites·20 claims
- 0597US12057471B2Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·2 cites·20 claims
- 0697US11997855B2Back-end-of-line selector for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·3 cites·20 claims
- 0797US11871584B1Multi-level hydrogen barrier layers for memory applicationsKEPLER COMPUTING INC·Filed 2021·Granted Jan 9, 2024·2 cites·20 claims
- 0897US11839088B1Integrated via and bridge electrodes for memory array applications and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Dec 5, 2023·2 cites·20 claims
- 0997US11765908B1Memory device fabrication through wafer bondingKEPLER COMPUTING INC·Filed 2023·Granted Sep 19, 2023·4 cites·19 claims
- 1097US11737288B2High-density memory device with planar thin film transistor (TFT) selector and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·6 cites·20 claims
- 1197US11647636B2Memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·3 cites·20 claims
- 1297US11527552B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·5 cites·20 claims
- 1396US12176433B2Polarization enhancement structure for enlarging memory windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·2 cites·20 claims
- 1495US10971684B2Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
- 1594US11855226B2Thin film transistor, semiconductor device and method of fabricating thin film transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 1694US11791420B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 1794US11757047B2Semiconducting metal oxide transistors having a patterned gate and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·3 cites·20 claims
- 1890US12349603B2Transistor, semiconductor device including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1990US12206024B2Transistors including crystalline raised active regions and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·1 cites·20 claims
- 2090US11430512B2Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 30, 2022·2 cites·20 claims
- 2189US2024389356A1Tunnel junction selector mramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2288US11587786B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·1 cites·20 claims
- 2387US11955548B2Two-dimensional (2D) material for oxide semiconductor (OS) ferroelectric field-effect transistor (FeFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·1 cites·20 claims
- 2487US2025359017A1High-density 3d-dram cell with scaled capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2587US2025359182A1Access transistor including a metal oxide barrier layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2687US2025120093A1Memory cell with unipolar selectorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2786US12471299B2Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 2886US12396371B2Three-state memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 2986US12207476B2Memory cell with unipolar selectorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 3086US12137621B2Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 3186US11581366B2Memory cell device with thin-film transistor selector and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·1 cites·20 claims
- 3286US11581335B2Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·1 cites·20 claims
- 3386US2025351739A1Three-state memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3486US2024381795A1Intercalated metal/dielectric structure for nonvolatile memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3586US2025133748A1High-density memory device with planar thin film transistor (tft) selector and methods for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3685US12219778B2Multi-gate selector switches for memory cells and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·1 cites·16 claims
- 3785US12144184B2Tunnel junction selector MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 3885US2025089304A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3985US2025301916A1Transistor, semiconductor device including the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4085US2025338507A1Back-end-of-line selector for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4184US12457753B2Back-end-of-line selector for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 4284US11380840B2Memory cell with magnetic access selector apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 4384US2024381669A1Spacer-defined back-end transistor as memory selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4483US11107859B2Memory cell with unipolar selectorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·3 cites·20 claims
- 4583US2025351366A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4682US12324360B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 4782US12274071B1Capacitor integrated with a transistor for logic and memory applicationsKEPLER COMPUTING INC·Filed 2023·Granted Apr 8, 2025·0 cites·22 claims
- 4882US12255236B2Self-aligned active regions and passivation layer and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 4982US12183825B2Thin film transistor including a hydrogen-blocking dielectric barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 31, 2024·0 cites·20 claims
- 5082US12051702B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
Showing the top 50 of 166 patent records by PatentIndex Score.
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