Inventor · disambiguated record
Matthew V. Metz
Also filed as: METZ MATTHEW · METZ MATTHEW V
308 granted patents·134 pending applications·3,774 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
442 records- 0199US7518196B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2005·Granted Apr 14, 2009·72 cites·22 claims
- 0298US11923410B2Transistor with isolation below source and drainINTEL CORP·Filed 2021·Granted Mar 5, 2024·4 cites·23 claims
- 0398US11444024B2Subtractively patterned interconnect structures for integrated circuitsINTEL CORP·Filed 2020·Granted Sep 13, 2022·10 cites·30 claims
- 0498US9123567B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureRADOSAVLJEVIC MARKO·Filed 2011·Granted Sep 1, 2015·66 cites·26 claims
- 0598US8110877B2Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regionsMUKHERJEE NILOY·Filed 2008·Granted Feb 7, 2012·108 cites·15 claims
- 0698US7893506B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2010·Granted Feb 22, 2011·35 cites·10 claims
- 0798US7569443B2Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gateINTEL CORP·Filed 2005·Granted Aug 4, 2009·72 cites·9 claims
- 0898US7485503B2Dielectric interface for group III-V semiconductor deviceINTEL CORP·Filed 2005·Granted Feb 3, 2009·63 cites·13 claims
- 0998US7479421B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyINTEL CORP·Filed 2005·Granted Jan 20, 2009·105 cites·2 claims
- 1097US9240410B2Group III-N nanowire transistorsTHEN HAN WUI·Filed 2011·Granted Jan 19, 2016·25 cites·17 claims
- 1197US8952541B2Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processesMUKHERJEE NILOY·Filed 2012·Granted Feb 10, 2015·36 cites·5 claims
- 1297US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 1397US8110458B2Fabrication of germanium nanowire transistorsJIN BEEN-YIH·Filed 2010·Granted Feb 7, 2012·51 cites·15 claims
- 1497US7355281B2Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2006·Granted Apr 8, 2008·47 cites·12 claims
- 1597US7226831B1Device with scavenging spacer layerINTEL CORP·Filed 2005·Granted Jun 5, 2007·60 cites·8 claims
- 1697US7208361B2Replacement gate process for making a semiconductor device that includes a metal gate electrodeINTEL CORP·Filed 2004·Granted Apr 24, 2007·128 cites·20 claims
- 1797US7126199B2Multilayer metal gate electrodeINTEL CORP·Filed 2004·Granted Oct 24, 2006·154 cites·5 claims
- 1896US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 1996US8129795B2Inducing strain in the channels of metal gate transistorsDATTA SUMAN·Filed 2011·Granted Mar 6, 2012·29 cites·5 claims
- 2096US7727830B2Fabrication of germanium nanowire transistorsINTEL CORP·Filed 2007·Granted Jun 1, 2010·58 cites·13 claims
- 2196US7425500B2Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistorsINTEL CORP·Filed 2006·Granted Sep 16, 2008·45 cites·16 claims
- 2296US7317231B2Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrodeINTEL CORP·Filed 2005·Granted Jan 8, 2008·35 cites·20 claims
- 2396US7153784B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 26, 2006·86 cites·48 claims
- 2496US7148548B2Semiconductor device with a high-k gate dielectric and a metal gate electrodeINTEL CORP·Filed 2004·Granted Dec 12, 2006·117 cites·27 claims
- 2595US12027458B2Subtractively patterned interconnect structures for integrated circuitsINTEL CORP·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 2695US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 2795US9245989B2High voltage field effect transistorsTHEN HAN WUI·Filed 2011·Granted Jan 26, 2016·17 cites·20 claims
- 2895US8193567B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyKAVALIEROS JACK T·Filed 2008·Granted Jun 5, 2012·33 cites·4 claims
- 2995US7785958B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2008·Granted Aug 31, 2010·38 cites·3 claims
- 3095US7595248B2Angled implantation for removal of thin film layersINTEL CORP·Filed 2005·Granted Sep 29, 2009·28 cites·8 claims
- 3195US7157378B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jan 2, 2007·107 cites·20 claims
- 3294US9397188B2Group III-N nanowire transistorsINTEL CORP·Filed 2015·Granted Jul 19, 2016·7 cites·8 claims
- 3394US8183646B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationCHAU ROBERT S·Filed 2011·Granted May 22, 2012·12 cites·18 claims
- 3494US7989280B2Dielectric interface for group III-V semiconductor deviceINTEL CORP·Filed 2008·Granted Aug 2, 2011·20 cites·11 claims
- 3594US7670894B2Selective high-k dielectric film deposition for semiconductor deviceINTEL CORP·Filed 2008·Granted Mar 2, 2010·20 cites·22 claims
- 3694US7465976B2Tunneling field effect transistor using angled implants for forming asymmetric source/drain regionsINTEL CORP·Filed 2005·Granted Dec 16, 2008·37 cites·11 claims
- 3794US7381608B2Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jun 3, 2008·85 cites·20 claims
- 3894US7220635B2Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layerINTEL CORP·Filed 2003·Granted May 22, 2007·78 cites·20 claims
- 3994US7217611B2Methods for integrating replacement metal gate structuresINTEL CORP·Filed 2003·Granted May 15, 2007·70 cites·17 claims
- 4094US7074680B2Method for making a semiconductor device having a high-k gate dielectricINTEL CORP·Filed 2004·Granted Jul 11, 2006·64 cites·20 claims
- 4193US10249740B2Ge nano wire transistor with GaAs as the sacrificial layerINTEL CORP·Filed 2015·Granted Apr 2, 2019·7 cites·18 claims
- 4293US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 4393US9461160B2Non-planar III-N transistorTHEN HAN WUI·Filed 2011·Granted Oct 4, 2016·13 cites·10 claims
- 4493US8368135B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2012·Granted Feb 5, 2013·8 cites·18 claims
- 4593US7825481B2Field effect transistor with narrow bandgap source and drain regions and method of fabricationINTEL CORP·Filed 2008·Granted Nov 2, 2010·12 cites·12 claims
- 4693US7390709B2Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeINTEL CORP·Filed 2004·Granted Jun 24, 2008·71 cites·15 claims
- 4793US7153734B2CMOS device with metal and silicide gate electrodes and a method for making itINTEL CORP·Filed 2003·Granted Dec 26, 2006·64 cites·4 claims
- 4893US7138323B2Planarizing a semiconductor structure to form replacement metal gatesINTEL CORP·Filed 2004·Granted Nov 21, 2006·51 cites·6 claims
- 4993US7064066B1Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrodeINTEL CORP·Filed 2004·Granted Jun 20, 2006·65 cites·36 claims
- 5093US7060568B2Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuitINTEL CORP·Filed 2004·Granted Jun 13, 2006·53 cites·12 claims
Showing the top 50 of 442 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →