Inventor · disambiguated record
Masao Nagatomo
Also filed as: NAGATOMO MASAO
18 granted patents·483 citations·filing 1980–1993
95Inventor score
Files withMITSUBISHI ELECTRIC CORP18
Top patents by PatentIndex Score
18 records- 0188US5112771AMethod of fibricating a semiconductor device having a trenchMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 12, 1992·90 cites·6 claims
- 0278US5164806AElement isolating structure of semiconductor device suitable for high density integrationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 17, 1992·68 cites·11 claims
- 0378US4341616ADry etching deviceMITSUBISHI ELECTRIC CORP·Filed 1980·Granted Jul 27, 1982·20 cites·7 claims
- 0474US5323343ADRAM device comprising a stacked type capacitor and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jun 21, 1994·33 cites·12 claims
- 0574US5241212ASemiconductor device having a redundant circuit portion and a manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 31, 1993·44 cites·1 claims
- 0674US4894695ASemiconductor device with no stress generated at the trench corner portion and the method for making the sameMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 16, 1990·27 cites·14 claims
- 0772US4985368AMethod for making semiconductor device with no stress generated at the trench corner portionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 15, 1991·24 cites·22 claims
- 0867US5047359AMethod of implanting into the sidewall of a trench by rotating the waferMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 10, 1991·34 cites·3 claims
- 0967US4984055ASemiconductor device having a plurality of conductive layers and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 8, 1991·33 cites·12 claims
- 1063US5888851AMethod of manufacturing a semiconductor device having a circuit portion and redundant circuit portion coupled through a meltable connectionMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Mar 30, 1999·27 cites·5 claims
- 1160US4333226AMethod of forming patterned refractory metal films by selective oxygen implant and sublimationMITSUBISHI ELECTRIC CORP·Filed 1980·Granted Jun 8, 1982·24 cites·15 claims
- 1249US4905068ASemiconductor device having interconnection layers of T-shape cross sectionMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 27, 1990·16 cites·13 claims
- 1346US5153689ASemiconductor memory device having bit lines formed of an interconnecting layer of lower reflectance material than the material of the word linesMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Oct 6, 1992·14 cites·7 claims
- 1443US4956692ASemiconductor device having an isolation oxide filmMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 11, 1990·11 cites·4 claims
- 1539US4702796AMethod for fabricting a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Oct 27, 1987·9 cites·10 claims
- 1635US5300444AMethod of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide filmMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 5, 1994·9 cites·20 claims
- 1730US4956310ASemiconductor memory device and fabricating method thereofMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 11, 1990·0 cites·4 claims
- 1830US4763182ASemiconductor memory device with deep bit-line channel stopperMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Aug 9, 1988·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →