Inventor · disambiguated record
Manuj Nahar
Also filed as: NAHAR MANUJ
27 granted patents·6 pending applications·48 citations·filing 2015–2025
94Inventor score
Files withMICRON TECHNOLOGY INC33
Top patents by PatentIndex Score
33 records- 0198US11552086B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 10, 2023·4 cites·14 claims
- 0298US9876018B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 23, 2018·27 cites·41 claims
- 0395US10650978B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturbMICRON TECHNOLOGY INC·Filed 2017·Granted May 12, 2020·7 cites·11 claims
- 0491US11264395B1Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 1, 2022·2 cites·24 claims
- 0586US11862668B2Single-crystal transistors for memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 2, 2024·1 cites·27 claims
- 0684US10748914B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 18, 2020·2 cites·30 claims
- 0784US2025118493A1Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric MaterialMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0883US10553673B2Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitorMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 4, 2020·3 cites·31 claims
- 0983US2024379739A1Devices comprising crystalline materialsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1082US12224310B2Single-crystal transistors for memory devicesMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1181US12057472B2Devices comprising crystalline materialsMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 6, 2024·0 cites·19 claims
- 1281US11856790B2Ferroelectric capacitorsMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 26, 2023·0 cites·9 claims
- 1380US2025089318A1Transistor and Methods of Forming TransistorsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1479US12432928B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 30, 2025·0 cites·22 claims
- 1579US12237112B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic device comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 25, 2025·0 cites·7 claims
- 1675US12191354B2Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetweenMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·7 claims
- 1775US10886130B2Methods of forming crystalline semiconductor material, and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 5, 2021·2 cites·47 claims
- 1874US11871582B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·0 cites·14 claims
- 1973US11469043B2Electronic device comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 11, 2022·0 cites·5 claims
- 2071US11676768B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 13, 2023·0 cites·18 claims
- 2171US11532699B2Devices comprising crystalline materials and related systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 2270US2025142909A1Single-crystal transistors for memory devicesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2368US11728387B2Semiconductor devices comprising continuous crystalline structures, and related memory devices and systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 15, 2023·0 cites·23 claims
- 2468US11417730B2Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regionsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 16, 2022·0 cites·6 claims
- 2566US11695071B2Transistor and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 4, 2023·0 cites·26 claims
- 2666US11404217B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 2763US10707298B2Methods of forming semiconductor structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 7, 2020·0 cites·18 claims
- 2863US2024268091A12-transistor memory cell and gate structure having multiple portionsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2959US10950384B2Method used in forming an electronic device comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 16, 2021·0 cites·35 claims
- 3058US11018229B2Methods of forming semiconductor structuresMICRON TECHNOLOGY INC·Filed 2018·Granted May 25, 2021·0 cites·18 claims
- 3157US10964811B2Transistor and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·0 cites·22 claims
- 3247US10923593B1Transistor and methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 16, 2021·0 cites·31 claims
- 3341US2020066516A1Semiconductor Structures Which Include Laminates of First and Second Regions, and Methods of Forming Semiconductor StructuresMICRON TECHNOLOGY INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →