Inventor · disambiguated record
Masayoshi Naito
Also filed as: NAGANO TAKAHIRO · NAITO MASAYOSHI
17 granted patents·302 citations·filing 1976–2006
95Inventor score
Top patents by PatentIndex Score
17 records- 0190US4223328AField controlled thyristor with dual resistivity field layerHITACHI LTD·Filed 1978·Granted Sep 16, 1980·42 cites·11 claims
- 0280US5361121APeriphery exposing method and apparatus thereforNIKON CORP·Filed 1991·Granted Nov 1, 1994·38 cites·4 claims
- 0373US4604535AFET-bipolar switching device and circuitHITACHI LTD·Filed 1982·Granted Aug 5, 1986·23 cites·8 claims
- 0467US5229811AApparatus for exposing peripheral portion of substrateNIKON CORP·Filed 1992·Granted Jul 20, 1993·21 cites·6 claims
- 0567US4388635AHigh breakdown voltage semiconductor deviceHITACHI LTD·Filed 1980·Granted Jun 14, 1983·19 cites·21 claims
- 0664US5420663AApparatus for exposing peripheral portion of substrateNIKON CORP·Filed 1994·Granted May 30, 1995·18 cites·12 claims
- 0761US7708517B2Workpiece transfer method, workpiece transfer system and workpiece transfer deviceNISSAN MOTOR·Filed 2006·Granted May 4, 2010·8 cites·8 claims
- 0858US5841946AChaotic character evaluating apparatus and method of the same and processing apparatus of resulting the chaotic character evaluationHITACHI LTD·Filed 1994·Granted Nov 24, 1998·32 cites·30 claims
- 0958US5510976AControl systemHITACHI LTD·Filed 1994·Granted Apr 23, 1996·19 cites·24 claims
- 1053US4542398ASemiconductor devices of multi-emitter typeHITACHI LTD·Filed 1984·Granted Sep 17, 1985·16 cites·15 claims
- 1147US4867136AEndoscope apparatusOLYMPUS OPTICAL CO·Filed 1988·Granted Sep 19, 1989·31 cites·36 claims
- 1240US4682199AHigh voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layerHITACHI LTD·Filed 1983·Granted Jul 21, 1987·6 cites·15 claims
- 1340US4235245ADevice for picking up tissues from a body cavityOLYMPUS OPTICAL CO·Filed 1978·Granted Nov 25, 1980·12 cites·6 claims
- 1438US5107307ASemiconductor device for control of lightHITACHI LTD·Filed 1991·Granted Apr 21, 1992·8 cites·33 claims
- 1535US4219832AThyristor having low on-state voltage with low areal doping emitter regionHITACHI LTD·Filed 1976·Granted Aug 26, 1980·5 cites·11 claims
- 1634US4107731ASilicon doped with cadmium to reduce lifetimeHITACHI LTD·Filed 1976·Granted Aug 15, 1978·3 cites·1 claims
- 1730US4404580ALight activated semiconductor deviceHITACHI LTD·Filed 1980·Granted Sep 13, 1983·1 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →