Inventor · disambiguated record
Mahalingam Nandakumar
Also filed as: NANDAKUMAR MAHALINGAM
89 granted patents·18 pending applications·738 citations·filing 1992–2025
99Inventor score
Files withTEXAS INSTRUMENTS INC96NANDAKUMAR MAHALINGAM6UNIV NORTH CAROLINA STATE2GARG KANAN1TEXAS INSTR INCORPATED1
Top patents by PatentIndex Score
107 records- 0195US6822297B2Additional n-type LDD/pocket implant for improving short-channel NMOS ESD robustnessTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 23, 2004·140 cites·11 claims
- 0292US12107117B2High resistance poly resistorTEXAS INSTRUMENTS INC·Filed 2023·Granted Oct 1, 2024·1 cites·18 claims
- 0392US8835270B2Dual NSD implants for reduced Rsd in an NMOS transistorTEXAS INSTRUMENTS INC·Filed 2012·Granted Sep 16, 2014·11 cites·24 claims
- 0491US11676961B2Semiconductor device with low noise transistor and low temperature coefficient resistorTEXAS INSTRUMENTS INC·Filed 2020·Granted Jun 13, 2023·2 cites·20 claims
- 0589US8927385B2ZTCR poly resistor in replacement gate flowTEXAS INSTRUMENTS INC·Filed 2012·Granted Jan 6, 2015·11 cites·10 claims
- 0689US8558310B2Indium, carbon and halogen doping for PMOS transistorsNANDAKUMAR MAHALINGAM·Filed 2010·Granted Oct 15, 2013·9 cites·9 claims
- 0789US7678637B2CMOS fabrication processTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 16, 2010·13 cites·16 claims
- 0887US7557022B2Implantation of carbon and/or fluorine in NMOS fabricationTEXAS INSTRUMENTS INC·Filed 2006·Granted Jul 7, 2009·13 cites·18 claims
- 0986US5917219ASemiconductor devices with pocket implant and counter dopingTEXAS INSTRUMENTS INC·Filed 1996·Granted Jun 29, 1999·58 cites·9 claims
- 1085US10249621B2Dummy contacts to mitigate plasma charging damage to gate dielectricsTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 2, 2019·5 cites·20 claims
- 1184US6306712B1Sidewall process and method of implantation for improved CMOS with benefit of low CGD, improved doping profiles, and insensitivity to chemical processingTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 23, 2001·61 cites·12 claims
- 1283US6960499B2Dual-counterdoped channel field effect transistor and methodTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 1, 2005·30 cites·9 claims
- 1382US8125035B2CMOS fabrication processNANDAKUMAR MAHALINGAM·Filed 2010·Granted Feb 28, 2012·5 cites·3 claims
- 1482US6579770B2Sidewall process and method of implantation for improved CMOS with benefit of low CGD, improved doping profiles, and insensitivity to chemical processingTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 17, 2003·24 cites·1 claims
- 1581US7393787B2Formation of nitrogen containing dielectric layers having a uniform nitrogen distribution therein using a high temperature chemical treatmentTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 1, 2008·9 cites·11 claims
- 1680US9780192B2Fringe capacitance reduction for replacement gate CMOSTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 3, 2017·2 cites·14 claims
- 1779US11588008B2High resistance poly resistorTEXAS INSTRUMENTS INC·Filed 2020·Granted Feb 21, 2023·1 cites·18 claims
- 1879US8941181B2Compensated well ESD diodes with reduced capacitanceTEXAS INSTRUMENTS INC·Filed 2012·Granted Jan 27, 2015·5 cites·4 claims
- 1978US12453111B2Channel stop and well dopant migration control implant for reduced MOS threshold voltage mismatchTEXAS INSTRUMENTS INC·Filed 2023·Granted Oct 21, 2025·0 cites·18 claims
- 2078US12317583B2Semiconductor device with low noise transistor and low temperature coefficient resistorTEXAS INSTRUMENTS INC·Filed 2023·Granted May 27, 2025·0 cites·26 claims
- 2178US8753944B2Pocket counterdoping for gate-edge diode leakage reductionTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 17, 2014·4 cites·20 claims
- 2278US2025267930A1Semiconductor device with low noise transistor and low temperature coefficient resistorTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 2378US2025048724A1Semiconductor device with diffusion suppression and ldd implants and an embedded non-ldd semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2477US9190277B2Combining ZTCR resistor with laser anneal for high performance PMOS transistorTEXAS INSTRUMENTS INC·Filed 2012·Granted Nov 17, 2015·3 cites·4 claims
- 2577US6479339B2Use of a thin nitride spacer in a split gate embedded analog processTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 12, 2002·20 cites·18 claims
- 2676US12154901B2Semiconductor device with diffusion suppression and LDD implants and an embedded non-LDD semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2023·Granted Nov 26, 2024·0 cites·23 claims
- 2776US12154987B2Damage implantation of cap layerTEXAS INSTRUMENTS INC·Filed 2021·Granted Nov 26, 2024·0 cites·23 claims
- 2876US9337297B2Fringe capacitance reduction for replacement gate CMOSTEXAS INSTRUMENTS INC·Filed 2014·Granted May 10, 2016·2 cites·20 claims
- 2976US8659112B2Carbon and nitrogen doping for selected PMOS transistor on an integrated circuitNANDAKUMAR MAHALINGAM·Filed 2010·Granted Feb 25, 2014·3 cites·19 claims
- 3074US8981490B2Transistor with deep Nwell implanted through the gateTEXAS INSTRUMENTS INC·Filed 2013·Granted Mar 17, 2015·3 cites·10 claims
- 3174US7638402B2Sidewall spacer pullback schemeTEXAS INSTRUMENTS INC·Filed 2007·Granted Dec 29, 2009·6 cites·18 claims
- 3274US2024290844A1Carbon, nitrogen and/or fluorine co-implants for low resistance transistorsTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3373US12484236B2Polysilicon resistor implant for reduced resistance temperature coefficient variabilityTEXAS INSTRUMENTS INC·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 3473US9589959B2Compensated well ESD diodes with reduced capacitanceTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 7, 2017·3 cites·9 claims
- 3573US8853042B2Carbon and nitrogen doping for selected PMOS transistors on an integrated circuitTEXAS INSTRUMENTS INC·Filed 2014·Granted Oct 7, 2014·2 cites·3 claims
- 3673US6362062B1Disposable sidewall spacer process for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 26, 2002·19 cites·23 claims
- 3771US11152350B2Dielectric spaced diodeTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 19, 2021·1 cites·21 claims
- 3871US6258644B1Mixed voltage CMOS process for high reliability and high performance core and I/O transistors with reduced mask stepsTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 10, 2001·17 cites·22 claims
- 3971US2023386923A1Reducing cross-wafer variability for minimum width resistorsTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 4070US12494425B2Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectricTEXAS INSTRUMENTS INC·Filed 2021·Granted Dec 9, 2025·0 cites·17 claims
- 4170US9548384B2Conductive spline for metal gatesTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 17, 2017·2 cites·10 claims
- 4270US6326281B1Integrated circuit isolationTEXAS INSTRUMENTS INC·Filed 1999·Granted Dec 4, 2001·37 cites·3 claims
- 4369US11011508B2Dielectric spaced diodeTEXAS INSTRUMENTS INC·Filed 2018·Granted May 18, 2021·1 cites·22 claims
- 4469US9761581B1Single mask level including a resistor and a through-gate implantTEXAS INSTRUMENTS INC·Filed 2016·Granted Sep 12, 2017·1 cites·12 claims
- 4569US6150669ACombination test structures for in-situ measurements during fabrication of semiconductor devicesTEXAS INSTRUMENTS INC·Filed 1999·Granted Nov 21, 2000·34 cites·10 claims
- 4669US5976937ATransistor having ultrashallow source and drain junctions with reduced gate overlap and methodTEXAS INSTRUMENTS INC·Filed 1998·Granted Nov 2, 1999·37 cites·21 claims
- 4768US12512322B2Small grain size polysilicon engineering for threshold voltage mismatch improvementTEXAS INSTRUMENTS INC·Filed 2022·Granted Dec 30, 2025·0 cites·26 claims
- 4868US9455252B2Combining ZTCR resistor with laser anneal for high performance PMOS transistorTEXAS INSTRUMENTS INC·Filed 2015·Granted Sep 27, 2016·1 cites·16 claims
- 4968US8962406B2Flatband shift for improved transistor performanceTEXAS INSTRUMENTS INC·Filed 2014·Granted Feb 24, 2015·1 cites·8 claims
- 5068US6617217B2Reduction in well implant channeling and resulting latchup characteristics in shallow trench isolation by implanting wells through nitrideTEXAS INSTR INCORPATED·Filed 2001·Granted Sep 9, 2003·23 cites·15 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Mahalingam Nandakumar files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →