Inventor · disambiguated record
Masaaki Nido
Also filed as: NIDO MASAAKI
17 granted patents·1 pending application·382 citations·filing 1994–2008
95Inventor score
Top patents by PatentIndex Score
18 records- 0189US7282745B2Nitride based semiconductor light-emitting deviceNEC CORP·Filed 2005·Granted Oct 16, 2007·10 cites·10 claims
- 0285US6977952B2Nitride based semiconductor light-emitting deviceNEC CORP·Filed 2001·Granted Dec 20, 2005·20 cites·13 claims
- 0384US5793054AGallium nitride type compound semiconductor light emitting elementNEC CORP·Filed 1996·Granted Aug 11, 1998·98 cites·6 claims
- 0481US6855959B2Nitride based semiconductor photo-luminescent deviceNEC CORP·Filed 2001·Granted Feb 15, 2005·32 cites·34 claims
- 0577US5843227ACrystal growth method for gallium nitride filmsNEC CORP·Filed 1997·Granted Dec 1, 1998·32 cites·9 claims
- 0676US6420198B1Gallium nitride based compound semiconductor laser and method of forming the sameNEC CORP·Filed 2000·Granted Jul 16, 2002·24 cites·39 claims
- 0774US7585117B2Optical moduleKANEKO TARO·Filed 2008·Granted Sep 8, 2009·8 cites·12 claims
- 0869US6329716B1Contact electrode for N-type gallium nitride-based compound semiconductor and method for forming the sameNEC CORP·Filed 1998·Granted Dec 11, 2001·25 cites·19 claims
- 0969US5902393AMethod for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxyNEC CORP·Filed 1997·Granted May 11, 1999·47 cites·13 claims
- 1061US6423562B1Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the sameNEC CORP·Filed 2001·Granted Jul 23, 2002·8 cites·9 claims
- 1161US6201823B1Gallium nitride based compound semiconductor laser and method of forming the sameNEC CORP·Filed 1997·Granted Mar 13, 2001·23 cites·102 claims
- 1260US7684133B2Optical moduleNEC CORP·Filed 2008·Granted Mar 23, 2010·2 cites·10 claims
- 1358US6635905B2Gallium nitride based compound semiconductor light-emitting deviceNEC CORP·Filed 2002·Granted Oct 21, 2003·8 cites·50 claims
- 1458US5425042ARefractive index control optical semiconductor deviceNEC CORP·Filed 1994·Granted Jun 13, 1995·17 cites·5 claims
- 1552US6096130AMethod of crystal growth of a GaN layer over a GaAs substrateNEC CORP·Filed 1997·Granted Aug 1, 2000·17 cites·17 claims
- 1644US2005098793A1Nitride based semiconductor photo-luminescent deviceNEC CORP·Filed 2004·Application pending·0 cites
- 1738US5559820AMultiple quantum well semiconductor laserNEC CORP·Filed 1995·Granted Sep 24, 1996·8 cites·7 claims
- 1833US5825053AHeterostructure III-V nitride semiconductor device including InP substrateNEC CORP·Filed 1997·Granted Oct 20, 1998·3 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →