Inventor · disambiguated record
Masahito Nishigohri
Also filed as: NISHIGOHRI MASAHITO
3 granted patents·31 citations·filing 1996–1998
69Inventor score
Files withTOSHIBA KK3
Top patents by PatentIndex Score
3 records- 0144US6384455B1MOS semiconductor device with shallow trench isolation structure and manufacturing method thereofTOSHIBA KK·Filed 1998·Granted May 7, 2002·16 cites·4 claims
- 0239US5886387ABiCMOS semiconductor integrated circuit device having MOS transistor and bipolar transistor regions of different thicknessTOSHIBA KK·Filed 1996·Granted Mar 23, 1999·8 cites·6 claims
- 0335US5874331AMethod of manufacturing CMOS semiconductor devices by forming a salicide structureTOSHIBA KK·Filed 1997·Granted Feb 23, 1999·7 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →