Inventor · disambiguated record
Masanobu Nogome
Also filed as: NOGOME MASANOBU
9 granted patents·3 pending applications·45 citations·filing 1999–2022
85Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD7NUVOTON TECHNOLOGY CORP JAPAN2MATSUSHITA ELECTRONICS CORP1NOGOME MASANOBU1PANASONIC CORP1
Top patents by PatentIndex Score
12 records- 0183US11258001B2Semiconductor light-emitting element and semiconductor light-emitting deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2020·Granted Feb 22, 2022·1 cites·19 claims
- 0268US12002914B2Semiconductor light-emitting element and semiconductor light-emitting deviceNUVOTON TECHNOLOGY CORP JAPAN·Filed 2022·Granted Jun 4, 2024·0 cites·18 claims
- 0358US7176099B2Hetero-junction bipolar transistor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Feb 13, 2007·1 cites·4 claims
- 0457US7012337B2Semiconductor device including a photosensitive resin covering at least a portion of a substrate having a via holeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 14, 2006·8 cites·7 claims
- 0557US6982141B2Semiconductor device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 3, 2006·8 cites·20 claims
- 0656US6903388B2Hetero-junction bipolar transistor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 7, 2005·6 cites·13 claims
- 0749US7091528B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 15, 2006·4 cites·9 claims
- 0848US6218685B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Apr 17, 2001·16 cites·3 claims
- 0948US2008265283A1Hetero-junction bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2008·Application pending·0 cites
- 1044US2010314665A1Hetero-junction bipolar transistorPANASONIC CORP·Filed 2010·Application pending·0 cites
- 1144US2007120148A1Hetero-junction bipolar transistorNOGOME MASANOBU·Filed 2006·Application pending·0 cites
- 1240US6777301B2Method of producing hetero-junction bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Aug 17, 2004·1 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →