Inventor · disambiguated record
Makoto Ogasawara
Also filed as: MORINAGA TSUTO · OGASAWARA MAKOTO
37 granted patents·2 pending applications·599 citations·filing 1978–2025
98Inventor score
Files withHITACHI LTD17TEIJIN LTD8RENESAS ELECTRONICS CORP4FUJI ELECTRIC CO LTD2ISHIHARA MINING & CHEMICAL CO2
Top patents by PatentIndex Score
39 records- 0191US4269947ACured or uncured aromatic polyester composition and process for its productionTEIJIN LTD·Filed 1979·Granted May 26, 1981·51 cites·10 claims
- 0287US4974060ASemiconductor integrated circuit device and method of manufacturing the sameHITACHI LTD·Filed 1989·Granted Nov 27, 1990·62 cites·15 claims
- 0383US5202275ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1990·Granted Apr 13, 1993·43 cites·23 claims
- 0479US5780882ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1995·Granted Jul 14, 1998·33 cites·8 claims
- 0579US4291152AProcess for producing aromatic polyesters having increased degrees of polymerizationTEIJIN LTD·Filed 1980·Granted Sep 22, 1981·27 cites·26 claims
- 0678US4585695AElectrically conductive polypyrrole articleAGENCY IND SCIENCE TECHN·Filed 1984·Granted Apr 29, 1986·26 cites·10 claims
- 0777US4331697ANovel heparin derivative, method for production thereof, and method for rendering biomedical materials antithrombotic by use of the novel heparin derivativeTEIJIN LTD·Filed 1980·Granted May 25, 1982·88 cites·5 claims
- 0876US6548847B2Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal filmHITACHI LTD·Filed 2001·Granted Apr 15, 2003·12 cites·33 claims
- 0974US6291847B1Semiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 1998·Granted Sep 18, 2001·30 cites·14 claims
- 1074US4333907ABiaxially oriented wholly aromatic polyester filmTEIJIN LTD·Filed 1980·Granted Jun 8, 1982·25 cites·19 claims
- 1173US5331191ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Jul 19, 1994·24 cites·11 claims
- 1271US6620704B2Method of fabricating low stress semiconductor devices with thermal oxide isolationHITACHI LTD·Filed 2001·Granted Sep 16, 2003·13 cites·4 claims
- 1368US4331800AProcess for producing aromatic polyesters having an increased degree of polymerizationTEIJIN LTD·Filed 1980·Granted May 25, 1982·18 cites·38 claims
- 1468US4292151AProcess for preparing a cured copolyetherester elastomeric compositionTEIJIN LTD·Filed 1979·Granted Sep 29, 1981·16 cites·10 claims
- 1568US2025370308A1Optical modulatorSUMITOMO ELECTRIC INDUSTRIES·Filed 2025·Application pending·0 cites
- 1662US6894334B2Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI VLSI ENG·Filed 2003·Granted May 17, 2005·5 cites·33 claims
- 1761US6169324B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·13 cites·19 claims
- 1861US5739589ASemiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 14, 1998·13 cites·21 claims
- 1960US7789077B2Crankcase of internal combustion engineHONDA MOTOR CO LTD·Filed 2007·Granted Sep 7, 2010·3 cites·11 claims
- 2059US11966104B2Optical modulatorSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Apr 23, 2024·0 cites·13 claims
- 2156US10651094B2Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2019·Granted May 12, 2020·0 cites·8 claims
- 2254US4196066ACured aromatic polyester composition and process for its productionTEIJIN LTD·Filed 1978·Granted Apr 1, 1980·9 cites·12 claims
- 2352US5874877ACircuit breakerFUJI ELECTRIC CO LTD·Filed 1997·Granted Feb 23, 1999·14 cites·8 claims
- 2451US6342412B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 29, 2002·8 cites·19 claims
- 2550US6127255ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 3, 2000·8 cites·12 claims
- 2650US5811316AMethod of forming teos oxide and silicon nitride passivation layer on aluminum wiringHITACHI LTD·Filed 1995·Granted Sep 22, 1998·8 cites·13 claims
- 2749US10211620B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Feb 19, 2019·0 cites·15 claims
- 2847US5794763ACircuit breakerFUJI ELECTRIC CO LTD·Filed 1997·Granted Aug 18, 1998·10 cites·6 claims
- 2947US5557147ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1994·Granted Sep 17, 1996·7 cites·18 claims
- 3046US6573546B2Semiconductor integrated circuit device and process for manufacturing the sameHITACHI LTD·Filed 2001·Granted Jun 3, 2003·2 cites·3 claims
- 3146US2016141289A1Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3244US4369207AProcess for production of laminated film structure of aromatic polyesterTEIJIN LTD·Filed 1980·Granted Jan 18, 1983·9 cites·8 claims
- 3343US4501774AProcess for the production of cobalt-containing magnetic iron oxide powderISHIHARA MINING & CHEMICAL CO·Filed 1982·Granted Feb 26, 1985·5 cites·12 claims
- 3442US6949387B2Method of designing a semiconductor deviceHITACHI LTD·Filed 2003·Granted Sep 27, 2005·0 cites·4 claims
- 3538US5512194AAcicular ferromagnetic iron oxide particles and process for producing the sameISHIHARA SANGYO KAISHA·Filed 1994·Granted Apr 30, 1996·6 cites·2 claims
- 3635US10438861B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Oct 8, 2019·0 cites·10 claims
- 3734US5889312ASemiconductor device having circuit element in stress gradient region by film for isolation and method of manufacturing the sameHITACHI LTD·Filed 1997·Granted Mar 30, 1999·6 cites·26 claims
- 3833US6310384B1Low stress semiconductor devices with thermal oxide isolationHITACHI LTD·Filed 1997·Granted Oct 30, 2001·2 cites·5 claims
- 3933US5041307AProcess for producing magnetic iron oxide particles for magnetic recordingISHIHARA MINING & CHEMICAL CO·Filed 1989·Granted Aug 20, 1991·3 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →