Inventor · disambiguated record
Makoto Ohi
Also filed as: OHI MAKOTO
17 granted patents·493 citations·filing 1991–2006
95Inventor score
Top patents by PatentIndex Score
17 records- 0196US5745417AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 28, 1998·135 cites·26 claims
- 0289US5898606AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 27, 1999·63 cites·2 claims
- 0387US8078393B2Navigation apparatusOHI MAKOTO·Filed 2005·Granted Dec 13, 2011·30 cites·11 claims
- 0481US5538912AMethod of making memory cells with peripheral transistorsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 23, 1996·38 cites·5 claims
- 0579US5672533AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 30, 1997·37 cites·1 claims
- 0679US5523596ASemiconductor device having capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 4, 1996·53 cites·4 claims
- 0772US5229314AMethod of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulationMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 20, 1993·33 cites·2 claims
- 0871US5400278ASemiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Mar 21, 1995·24 cites·10 claims
- 0967US5489791AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 6, 1996·22 cites·3 claims
- 1061US5276344AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 4, 1994·17 cites·27 claims
- 1159US8265867B2Route search systemARITA HIDEKAZU·Filed 2006·Granted Sep 11, 2012·3 cites·2 claims
- 1247US5338957ANonvolatile semiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Aug 16, 1994·12 cites·4 claims
- 1344US8306744B2Vehicle-mounted equipmentOHI MAKOTO·Filed 2006·Granted Nov 6, 2012·0 cites·18 claims
- 1444US5683929AMethod of manufacturing a semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 4, 1997·9 cites·3 claims
- 1540US5233212ASemiconductor device having gate electrode spacing dependent upon gate side wall insulating dimensionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 3, 1993·9 cites·1 claims
- 1638US5338699AMethod of making a semiconductor integrated device having gate sidewall structureMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Aug 16, 1994·8 cites·5 claims
- 1730US5157469AField effect transistor having a multilayer interconnection layer therein with tapered sidewall insulatorsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 20, 1992·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →