Inventor · disambiguated record
Marius Orlowski
Also filed as: ORLOWSKI MARIUS · ORLOWSKI MARIUS K
81 granted patents·12 pending applications·1,928 citations·filing 1991–2020
99Inventor score
Files withFREESCALE SEMICONDUCTOR INC62MOTOROLA INC13ORLOWSKI MARIUS6BRAECKELMANN GREG3ORLOWSKI MARIUS K3
Top patents by PatentIndex Score
93 records- 0199US5705415AProcess for forming an electrically programmable read-only memory cellMOTOROLA INC·Filed 1994·Granted Jan 6, 1998·290 cites·23 claims
- 0298US6433382B1Split-gate vertically oriented EEPROM device and processMOTOROLA INC·Filed 1995·Granted Aug 13, 2002·246 cites·32 claims
- 0397US7226833B2Semiconductor device structure and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 5, 2007·124 cites·18 claims
- 0497US7112832B2Transistor having multiple channelsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 26, 2006·51 cites·12 claims
- 0596US7354831B2Multi-channel transistor structure and method of making thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 8, 2008·40 cites·18 claims
- 0696US7238580B2Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentrationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 3, 2007·59 cites·16 claims
- 0796US7221006B2GeSOI transistor with low junction current and low junction capacitance and method for making the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 22, 2007·48 cites·19 claims
- 0895US7592248B2Method of forming semiconductor device having nanotube structuresFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 22, 2009·34 cites·11 claims
- 0995US7339241B2FinFET structure with contactsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 4, 2008·42 cites·11 claims
- 1095US6921700B2Method of forming a transistor having multiple channelsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jul 26, 2005·96 cites·13 claims
- 1194US7435639B2Dual surface SOI by lateral epitaxial overgrowthFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 14, 2008·34 cites·20 claims
- 1294US7238555B2Single transistor memory cell with reduced programming voltagesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 3, 2007·29 cites·12 claims
- 1394US6831350B1Semiconductor structure with different lattice constant materials and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 14, 2004·89 cites·21 claims
- 1493US8293608B2Intermediate product for a multichannel FET and process for obtaining an intermediate productORLOWSKI MARIUS·Filed 2008·Granted Oct 23, 2012·34 cites·20 claims
- 1592US7608893B2Multi-channel transistor structure and method of making thereofFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 27, 2009·19 cites·20 claims
- 1692US5314834AField effect transistor having a gate dielectric with variable thicknessMOTOROLA INC·Filed 1991·Granted May 24, 1994·99 cites·5 claims
- 1789US7932189B2Process of forming an electronic device including a layer of discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 26, 2011·16 cites·20 claims
- 1888US8633515B2Transistors with immersed contactsORLOWSKI MARIUS K·Filed 2012·Granted Jan 21, 2014·8 cites·17 claims
- 1988US7811891B2Method to control the gate sidewall profile by graded material compositionFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 12, 2010·17 cites·12 claims
- 2088US7629220B2Method for forming a semiconductor device and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 8, 2009·11 cites·20 claims
- 2186US8264060B2Method of sealing an air gap in a layer of a semiconductor structure and semiconductor structureBRAECKELMANN GREG·Filed 2011·Granted Sep 11, 2012·10 cites·20 claims
- 2286US7029980B2Method of manufacturing SOI template layerFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·25 cites·17 claims
- 2385US7968394B2Transistor with immersed contacts and methods of forming thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 28, 2011·9 cites·16 claims
- 2484US8158484B2Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor deviceORLOWSKI MARIUS·Filed 2007·Granted Apr 17, 2012·10 cites·20 claims
- 2584US7544576B2Diffusion barrier for nickel silicides in a semiconductor fabrication processFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 9, 2009·11 cites·8 claims
- 2683US7456055B2Process for forming an electronic device including semiconductor finsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 25, 2008·10 cites·19 claims
- 2781US7288448B2Method and apparatus for mobility enhancement in a semiconductor deviceORLOWSKI MARIUS K·Filed 2004·Granted Oct 30, 2007·24 cites·14 claims
- 2881US7202117B2Method of making a planar double-gated transistorFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 10, 2007·9 cites·20 claims
- 2981US6573160B2Method of recrystallizing an amorphous region of a semiconductorMOTOROLA INC·Filed 2000·Granted Jun 3, 2003·30 cites·21 claims
- 3081US5741736AProcess for forming a transistor with a nonuniformly doped channelMOTOROLA INC·Filed 1996·Granted Apr 21, 1998·49 cites·27 claims
- 3180US7037795B1Low RC product transistors in SOI semiconductor processFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted May 2, 2006·26 cites·17 claims
- 3278US7939412B2Process for forming an electronic device including a fin-type transistor structureFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted May 10, 2011·4 cites·20 claims
- 3378US7312129B2Method for producing two gates controlling the same channelFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 25, 2007·7 cites·20 claims
- 3477US8071459B2Method of sealing an air gap in a layer of a semiconductor structure and semiconductor structureBRAECKELMANN GREG·Filed 2008·Granted Dec 6, 2011·8 cites·20 claims
- 3577US7442590B2Method for forming a semiconductor device having a fin and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 28, 2008·6 cites·15 claims
- 3675US7772584B2Laterally grown nanotubes and method of formationFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Aug 10, 2010·5 cites·16 claims
- 3775US7700438B2MOS device with nano-crystal gate structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 20, 2010·5 cites·15 claims
- 3875US7575958B2Programmable fuse with silicon germaniumFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 18, 2009·6 cites·23 claims
- 3975US7517741B2Single transistor memory cell with reduced recombination ratesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 14, 2009·5 cites·21 claims
- 4075US7371677B2Laterally grown nanotubes and method of formationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 13, 2008·5 cites·10 claims
- 4174US7166897B2Method and apparatus for performance enhancement in an asymmetrical semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 23, 2007·19 cites·24 claims
- 4274US5605855AProcess for fabricating a graded-channel MOS deviceMOTOROLA INC·Filed 1995·Granted Feb 25, 1997·50 cites·9 claims
- 4373US7986006B2Single transistor memory cell with reduced recombination ratesFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jul 26, 2011·4 cites·10 claims
- 4472US7781840B2Semiconductor device structureFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·4 cites·6 claims
- 4572US7045432B2Method for forming a semiconductor device with local semiconductor-on-insulator (SOI)FREESCALE SEMICONDUCTOR INC·Filed 2004·Granted May 16, 2006·14 cites·26 claims
- 4670US7163903B2Method for making a semiconductor structure using silicon germaniumFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 16, 2007·10 cites·21 claims
- 4769US8552501B2Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor deviceORLOWSKI MARIUS·Filed 2012·Granted Oct 8, 2013·2 cites·25 claims
- 4868US7205202B2Semiconductor device and method for regional stress controlFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 17, 2007·3 cites·18 claims
- 4967US7928502B2Transistor devices with nano-crystal gate structuresFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Apr 19, 2011·2 cites·19 claims
- 5067US7291521B2Self correcting suppression of threshold voltage variation in fully depleted transistorsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 6, 2007·4 cites·15 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →