Inventor · disambiguated record
Matthias Passlack
Also filed as: PASSLACK MATTHIAS
91 granted patents·9 pending applications·1,544 citations·filing 1994–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD51FREESCALE SEMICONDUCTOR INC17MOTOROLA INC11TAIWAN SEMICONDUCTOR MFG6PASSLACK MATTHIAS5
Top patents by PatentIndex Score
100 records- 0199US9214555B2Barrier layer for FinFET channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 15, 2015·591 cites·18 claims
- 0297US9711647B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 18, 2017·13 cites·20 claims
- 0397US8288798B2Step doping in extensions of III-V family semiconductor devicesPASSLACK MATTHIAS·Filed 2011·Granted Oct 16, 2012·98 cites·18 claims
- 0496US7119381B2Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devicesFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 10, 2006·121 cites·21 claims
- 0595US8471329B2Tunnel FET and methods for forming the sameBHUWALKA KRISHNA KUMAR·Filed 2011·Granted Jun 25, 2013·25 cites·20 claims
- 0695US6963090B2Enhancement mode metal-oxide-semiconductor field effect transistorFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Nov 8, 2005·135 cites·13 claims
- 0794US8604518B2Split-channel transistor and methods for forming the sameBHUWALKA KRISHNA KUMAR·Filed 2011·Granted Dec 10, 2013·18 cites·14 claims
- 0893US9876088B1III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·7 cites·20 claims
- 0991US9368604B1Method of removing threading dislocation defect from a fin feature of III-V group semiconductor materialTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·9 cites·20 claims
- 1090US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
- 1189US11769798B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
- 1288US11587786B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·1 cites·20 claims
- 1387US10937908B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 2, 2021·3 cites·20 claims
- 1486US12015083B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·1 cites·20 claims
- 1586US5907792AMethod of forming a silicon nitride layerMOTOROLA INC·Filed 1997·Granted May 25, 1999·84 cites·14 claims
- 1686US2025151347A1Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1784US12218198B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1883US11437594B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·1 cites·20 claims
- 1982US12051702B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 2082US8916927B2Vertical tunnel field effect transistor (FET)BHUWALKA KRISHNA·Filed 2012·Granted Dec 23, 2014·4 cites·20 claims
- 2182US2024339537A1Thin-sheet finfet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2281US10505025B1Tunnel field-effect transistor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
- 2381US9647097B2Vertical tunnel field effect transistor (FET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 9, 2017·2 cites·21 claims
- 2479US11088246B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·1 cites·20 claims
- 2579US10991576B2Crystalline semiconductor layer formed in BEOL processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 2679US10923659B2Wafers for use in aligning nanotubes and methods of making and using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·2 cites·20 claims
- 2779US9355920B2Methods of forming semiconductor devices and FinFET devices, and FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 31, 2016·3 cites·20 claims
- 2879US7935620B2Method for forming semiconductor devices with low leakage Schottky contactsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 3, 2011·6 cites·18 claims
- 2979US5550089AGallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.LUCENT TECHNOLOGIES INC·Filed 1994·Granted Aug 27, 1996·39 cites·16 claims
- 3079US2024395818A1Fin-Based Field Effect TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3178US12010856B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 3276US12154903B2Fin-based field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 3376US12107126B2Steep sloped vertical tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 3476US11728418B2Tunnel field-effect transistor with reduced trap-assisted tunneling leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 3575US5821171AArticle comprising a gallium layer on a GaAs-based semiconductor, and method of making the articleLUCENT TECHNOLOGIES INC·Filed 1995·Granted Oct 13, 1998·56 cites·8 claims
- 3674US11557726B2Wafers for use in aligning nanotubes and methods of making and using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 3774US10680062B2III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 9, 2020·1 cites·20 claims
- 3874US10516039B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 3972US10263073B2III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 16, 2019·1 cites·19 claims
- 4071US7442654B2Method of forming an oxide layer on a compound semiconductor structureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 28, 2008·3 cites·22 claims
- 4171US7432565B2III-V compound semiconductor heterostructure MOSFET deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 7, 2008·5 cites·14 claims
- 4270US11411103B2Tunnel field-effect transistor with reduced trap-assisted tunneling leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 4370US11349022B2Tunnel field-effect transistor with reduced trap-assisted tunneling leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 4470US7692224B2MOSFET structure and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 6, 2010·4 cites·20 claims
- 4570US5451548AElectron beam deposition of gallium oxide thin films using a single high purity crystal sourceAT & T CORP·Filed 1994·Granted Sep 19, 1995·46 cites·17 claims
- 4669US5665658AMethod of forming a dielectric layer structureMOTOROLA INC·Filed 1996·Granted Sep 9, 1997·35 cites·23 claims
- 4768US7429506B2Process of making a III-V compound semiconductor heterostructure MOSFETFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 30, 2008·4 cites·15 claims
- 4868US5597768AMethod of forming a Ga2 O3 dielectric layerMOTOROLA INC·Filed 1996·Granted Jan 28, 1997·32 cites·14 claims
- 4967US11355590B2Steep sloped vertical tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 5067US7253455B2pHEMT with barrier optimized for low temperature operationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 7, 2007·4 cites·13 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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