Inventor · disambiguated record
Marko Radosavljevic
Also filed as: RADOSAVLJEVIC MARKO
380 granted patents·126 pending applications·1,881 citations·filing 2000–2025
99Inventor score
Top patents by PatentIndex Score
506 records- 0198US11348919B2Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approachINTEL CORP·Filed 2020·Granted May 31, 2022·5 cites·23 claims
- 0298US9123567B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureRADOSAVLJEVIC MARKO·Filed 2011·Granted Sep 1, 2015·66 cites·26 claims
- 0398US8890264B2Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interfaceDEWEY GILBERT·Filed 2012·Granted Nov 18, 2014·95 cites·13 claims
- 0498US8283653B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Oct 9, 2012·47 cites·20 claims
- 0598US7898041B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2007·Granted Mar 1, 2011·113 cites·20 claims
- 0698US7279375B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2005·Granted Oct 9, 2007·93 cites·12 claims
- 0798US7170120B2Carbon nanotube energy well (CNEW) field effect transistorINTEL CORP·Filed 2005·Granted Jan 30, 2007·149 cites·15 claims
- 0897US10431717B1Light-emitting diode (LED) and micro LED substrates and methods for making the sameINTEL CORP·Filed 2018·Granted Oct 1, 2019·17 cites·17 claims
- 0997US9240410B2Group III-N nanowire transistorsTHEN HAN WUI·Filed 2011·Granted Jan 19, 2016·25 cites·17 claims
- 1097US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 1197US8575596B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 5, 2013·24 cites·14 claims
- 1296US11996411B2Stacked forksheet transistorsINTEL CORP·Filed 2020·Granted May 28, 2024·4 cites·21 claims
- 1396US9209290B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 8, 2015·11 cites·14 claims
- 1496US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 1596US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 1696US8768271B1Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2012·Granted Jul 1, 2014·16 cites·18 claims
- 1796US7947971B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2010·Granted May 24, 2011·24 cites·10 claims
- 1896US7879675B2Field effect transistor with metal source/drain regionsINTEL CORP·Filed 2008·Granted Feb 1, 2011·36 cites·8 claims
- 1995US12243875B2Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2024·Granted Mar 4, 2025·2 cites·20 claims
- 2095US11862636B2Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approachINTEL CORP·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 2195US10720505B2Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performanceINTEL CORP·Filed 2016·Granted Jul 21, 2020·10 cites·19 claims
- 2295US9660064B2Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stackINTEL CORP·Filed 2013·Granted May 23, 2017·15 cites·26 claims
- 2395US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 2495US9530878B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 27, 2016·8 cites·14 claims
- 2595US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 2695US9245989B2High voltage field effect transistorsTHEN HAN WUI·Filed 2011·Granted Jan 26, 2016·17 cites·20 claims
- 2795US8823059B2Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2012·Granted Sep 2, 2014·15 cites·31 claims
- 2895US7759142B1Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2008·Granted Jul 20, 2010·29 cites·17 claims
- 2994US10084058B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2016·Granted Sep 25, 2018·7 cites·14 claims
- 3094US9806203B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2016·Granted Oct 31, 2017·7 cites·36 claims
- 3194US9755062B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2016·Granted Sep 5, 2017·7 cites·20 claims
- 3294US9397188B2Group III-N nanowire transistorsINTEL CORP·Filed 2015·Granted Jul 19, 2016·7 cites·8 claims
- 3394US8896101B2Nonplanar III-N transistors with compositionally graded semiconductor channelsTHEN HAN WUI·Filed 2012·Granted Nov 25, 2014·14 cites·19 claims
- 3494US8258498B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2011·Granted Sep 4, 2012·15 cites·17 claims
- 3594US7670894B2Selective high-k dielectric film deposition for semiconductor deviceINTEL CORP·Filed 2008·Granted Mar 2, 2010·20 cites·22 claims
- 3693US10658471B2Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layersINTEL CORP·Filed 2015·Granted May 19, 2020·8 cites·18 claims
- 3793US10096683B2Group III-N transistor on nanoscale template structuresINTEL CORP·Filed 2017·Granted Oct 9, 2018·5 cites·20 claims
- 3893US10056456B2N-channel gallium nitride transistorsINTEL CORP·Filed 2014·Granted Aug 21, 2018·8 cites·25 claims
- 3993US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 4093US9461160B2Non-planar III-N transistorTHEN HAN WUI·Filed 2011·Granted Oct 4, 2016·13 cites·10 claims
- 4193US8987091B2III-N material structure for gate-recessed transistorsTHEN HAN WUI·Filed 2011·Granted Mar 24, 2015·11 cites·21 claims
- 4293US6843850B2Catalyst-free growth of single-wall carbon nanotubesIBM·Filed 2002·Granted Jan 18, 2005·44 cites·19 claims
- 4392US11233053B2Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabricationINTEL CORP·Filed 2017·Granted Jan 25, 2022·6 cites·20 claims
- 4492US10541305B2Group III-N nanowire transistorsINTEL CORP·Filed 2019·Granted Jan 21, 2020·4 cites·20 claims
- 4592US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
- 4692US9716149B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 4792US9666492B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2015·Granted May 30, 2017·6 cites·17 claims
- 4892US9136343B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2013·Granted Sep 15, 2015·9 cites·25 claims
- 4992US9029835B2Epitaxial film on nanoscale structureINTEL CORP·Filed 2012·Granted May 12, 2015·13 cites·19 claims
- 5092US8936976B2Conductivity improvements for III-V semiconductor devicesRADOSAVLJEVIC MARKO·Filed 2009·Granted Jan 20, 2015·16 cites·20 claims
Showing the top 50 of 506 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →