Inventor · disambiguated record
Maurice Rivoire
Also filed as: RIVOIRE MAURICE
20 granted patents·1 pending application·314 citations·filing 1993–2017
95Inventor score
Files withCLARIANT FRANCE SA4FRANCE TELECOM3AZ ELECTRONIC MATERIALS USA2COIFFIC JEAN-CHRISTOPHE2DI CIOCCIO LEA2
Top patents by PatentIndex Score
21 records- 0193US6117750AProcess for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectivelyFRANCE TELECOM·Filed 1998·Granted Sep 12, 2000·123 cites·18 claims
- 0289US6429098B1Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtainedFRANCE TELECOM·Filed 2000·Granted Aug 6, 2002·42 cites·37 claims
- 0387US8647983B2Simplified copper-copper bondingDI CIOCCIO LEA·Filed 2010·Granted Feb 11, 2014·12 cites·15 claims
- 0484US6399502B1Process for fabricating a planar heterostructureFRANCE TELECOM·Filed 2000·Granted Jun 4, 2002·31 cites·8 claims
- 0580US9620385B2Method of planarizing recesses filled with copperST MICROELECTRONICS CROLLES 2 SAS·Filed 2015·Granted Apr 11, 2017·4 cites·6 claims
- 0679US7492026B2Light sensor located above an integrated circuitST MICROELECTRONICS SA·Filed 2005·Granted Feb 17, 2009·4 cites·10 claims
- 0777US9865545B2Plurality of substrates bonded by direct bonding of copper recessesST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Granted Jan 9, 2018·3 cites·12 claims
- 0873US7713766B2Light sensor located above an integrated circuitST MICROELECTRONICS SA·Filed 2008·Granted May 11, 2010·2 cites·13 claims
- 0962US8562934B2Method for forming porous material in microcavity or micropassage by mechanicochemical polishingCOIFFIC JEAN-CHRISTOPHE·Filed 2009·Granted Oct 22, 2013·2 cites·11 claims
- 1060US9620412B2Method for modifying the crystalline structure of a copper elementDI CIOCCIO LEA·Filed 2010·Granted Apr 11, 2017·1 cites·11 claims
- 1160US7200908B2Method of making a variable capacitor componentCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Apr 10, 2007·3 cites·4 claims
- 1260US6386950B1Process for mechanical chemical polishing of layer of aluminium or aluminium alloy conducting materialCLARIANT FRANCE SA·Filed 2000·Granted May 14, 2002·8 cites·16 claims
- 1360US6362108B1Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constantCLARIANT FRANCE SA·Filed 2000·Granted Mar 26, 2002·5 cites·10 claims
- 1455US6043159AChemical mechanical polishing process for layers of isolating materials based on silicon derivatives or siliconCLARIANT CHIMIE SA·Filed 1997·Granted Mar 28, 2000·21 cites·19 claims
- 1553US6126518AChemical mechanical polishing process for layers of semiconductor or isolating materialsCLARIANT FRANCE SA·Filed 1998·Granted Oct 3, 2000·22 cites·15 claims
- 1651US7252695B2Abrasive composition for the integrated circuit electronics industryAZ ELECTRONIC MATERIALS USA·Filed 2006·Granted Aug 7, 2007·0 cites·14 claims
- 1748US8323733B2Method for producing a membrane comprising micropassages made from porous material by chemical mechanical polishingCOIFFIC JEAN-CHRISTOPHE·Filed 2009·Granted Dec 4, 2012·0 cites·17 claims
- 1844US6302765B1Process for mechanical chemical polishing of a layer in a copper-based materialCLARIANT FRANCE SA·Filed 1999·Granted Oct 16, 2001·12 cites·17 claims
- 1944US5431964AMethod of pretreating the deposition chamber and/or the substrate for the selective deposition of tungstenFRANCE TELECOM ETABLISSEMENT P·Filed 1993·Granted Jul 11, 1995·16 cites·8 claims
- 2036US2002160692A1Method for planarizing organosilicate layersAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 2132US7144814B2Abrasive composition for the integrated circuits electronics industryAZ ELECTRONIC MATERIALS USA·Filed 1999·Granted Dec 5, 2006·3 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →