Inventor · disambiguated record
Mark Todhunter Robson
Also filed as: ROBSON MARK T · ROBSON MARK TODHUNTER
6 granted patents·2 pending applications·36 citations·filing 2007–2011
80Inventor score
Top patents by PatentIndex Score
8 records- 0188US7723851B2Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep viasIBM·Filed 2007·Granted May 25, 2010·17 cites·10 claims
- 0277US7704869B2Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep viasIBM·Filed 2007·Granted Apr 27, 2010·7 cites·16 claims
- 0376US7919379B2Dielectric spacer removalIBM·Filed 2007·Granted Apr 5, 2011·5 cites·14 claims
- 0473US7955967B2Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep viasIBM·Filed 2009·Granted Jun 7, 2011·5 cites·13 claims
- 0561US9318375B2Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep viasLA TULIPE JR DOUGLAS C·Filed 2009·Granted Apr 19, 2016·2 cites·11 claims
- 0641US2008277726A1Devices with Metal Gate, High-k Dielectric, and Butted ElectrodesDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 0741US2009039436A1High Performance Metal Gate CMOS with High-K Gate DielectricDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 0828US8906248B2Silicon on insulator etchLI SIYI·Filed 2011·Granted Dec 9, 2014·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →