Inventor · disambiguated record
Mattia Robustelli
Also filed as: ROBUSTELLI MATTIA
38 granted patents·8 pending applications·76 citations·filing 2008–2025
96Inventor score
Top patents by PatentIndex Score
46 records- 0198US9627055B1Phase change memory devices and systems having reduced voltage threshold drift and associated methodsINTEL CORP·Filed 2015·Granted Apr 18, 2017·31 cites·23 claims
- 0296US11217308B1Programming memory cells using asymmetric current pulsesMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 4, 2022·6 cites·25 claims
- 0396US10854813B2Dopant-modulated etching for memory devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 1, 2020·11 cites·25 claims
- 0492US10755781B2Techniques for programming multi-level self-selecting memory cellMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 25, 2020·9 cites·19 claims
- 0588US11335403B2Techniques for programming multi-level self-selecting memory cellMICRON TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·2 cites·20 claims
- 0685US12514138B2Dopant-modulated etching for memory devicesMICRON TECHNOLOGY INC·Filed 2023·Granted Dec 30, 2025·0 cites·19 claims
- 0784US11887661B2Cross-point pillar architecture for memory arraysMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 30, 2024·1 cites·25 claims
- 0879US12361988B2Adaptive write operations for a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0979US12293789B2Programming techniques for polarity-based memory cellsMICRON TECHNOLOGY INC·Filed 2024·Granted May 6, 2025·0 cites·20 claims
- 1079US2025342889A1Unipolar programming of memory cellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1178US12462870B2Reading a multi-level memory cellMICRON TECHNOLOGY INC·Filed 2024·Granted Nov 4, 2025·0 cites·19 claims
- 1278US2025226029A1Cross-point pillar architecture for memory arraysMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1376US12283316B2Cross-point pillar architecture for memory arraysMICRON TECHNOLOGY INC·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 1476US10043576B2Phase change memory devices and systems having reduced voltage threshold drift and associated methodsINTEL CORP·Filed 2017·Granted Aug 7, 2018·3 cites·21 claims
- 1575US7940568B1Dynamic polarization for reducing stress induced leakage currentMICRON TECHNOLOGY INC·Filed 2008·Granted May 10, 2011·9 cites·14 claims
- 1675US2025273272A1Apparatus with multi-bit cell read mechanism and methods for operating the sameMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1774US12295147B2Asymmetric memory cell designMICRON TECHNOLOGY INC·Filed 2022·Granted May 6, 2025·0 cites·14 claims
- 1873US12014779B2Programming techniques for polarity-based memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 1971US2025118372A1Write latency and energy using asymmetric cell designMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2071US2025261380A1Asymmetric memory cell designMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2170US11996141B2Reading a multi-level memory cellMICRON TECHNOLOGY INC·Filed 2022·Granted May 28, 2024·0 cites·18 claims
- 2270US11942183B2Adaptive write operations for a memory deviceMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 26, 2024·0 cites·17 claims
- 2369US12073881B2Techniques for programming multi-level self-selecting memory cellMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 2468US11800816B2Dopant-modulated etching for memory devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 24, 2023·0 cites·20 claims
- 2568US8451662B2Reading memory cell history during program operation for adaptive programmingVISCONTI ANGELO·Filed 2011·Granted May 28, 2013·3 cites·22 claims
- 2667US11705199B2Programming memory cells using asymmetric current pulsesMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 18, 2023·0 cites·20 claims
- 2766US11302390B2Reading a multi-level memory cellMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 12, 2022·0 cites·22 claims
- 2866US2024404590A1Techniques for multi-level memory cell programmingMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2964US11423988B2Programming techniques for polarity-based memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 23, 2022·0 cites·25 claims
- 3064US11114159B2Dedicated read voltages for data structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 7, 2021·0 cites·20 claims
- 3163US12125540B2Write latency and energy using asymmetric cell designMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 22, 2024·0 cites·19 claims
- 3262US12367933B2Unipolar programming of memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 22, 2025·0 cites·23 claims
- 3362US11837267B2Implementations to store fuse data in memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 3461US12322447B2Apparatus with multi-bit cell read mechanism and methods for operating the sameMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 3, 2025·0 cites·17 claims
- 3559US12033695B2Techniques for multi-level chalcogenide memory cell programmingMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 9, 2024·0 cites·25 claims
- 3658US2024427699A1Referencing memory using portions of a split logical block addressMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3754US8705287B2Semiconductor memory device and method of operating the sameARITOME SEIICHI·Filed 2011·Granted Apr 22, 2014·1 cites·13 claims
- 3853US12488835B2Wordline boost by charge sharing in a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 2, 2025·0 cites·23 claims
- 3953US11158358B2Adaptive write operations for a memory deviceMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 26, 2021·0 cites·19 claims
- 4051US2024130143A1Memory and storage on a single chipMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 4148US11037613B2Implementations to store fuse data in memory devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 4248US10658034B1Dedicated read voltages for data structuresMICRON TECHNOLOGY INC·Filed 2018·Granted May 19, 2020·0 cites·25 claims
- 4347US9111631B2Reading memory cell history during program operation for adaptive programmingMICRON TECHNOLOGY INC·Filed 2014·Granted Aug 18, 2015·0 cites·20 claims
- 4444US9349481B2Semiconductor memory device and method of operating the sameSK HYNIX INC·Filed 2014·Granted May 24, 2016·0 cites·14 claims
- 4541US8773907B2Reading memory cell history during program operation for adaptive programmingMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 8, 2014·0 cites·19 claims
- 4633US8274832B2Dynamic polarization for reducing stress induced leakage currentCHIAVARONE LUCA·Filed 2011·Granted Sep 25, 2012·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →