Inventor · disambiguated record
Matthew N. Rocklein
Also filed as: ROCKLEIN MATTHEW N
36 granted patents·5 pending applications·130 citations·filing 2010–2024
96Inventor score
Files withMICRON TECHNOLOGY INC36RAMASWAMY D V NIRMAL2ANTONOV VASSIL1COLLINS DALE W1ROCKLEIN MATTHEW N1
Top patents by PatentIndex Score
41 records- 0197US9460770B1Methods of operating ferroelectric memory cells, and related ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 4, 2016·27 cites·23 claims
- 0297US9231206B2Methods of forming a ferroelectric memory cellMICRON TECHNOLOGY INC·Filed 2013·Granted Jan 5, 2016·21 cites·20 claims
- 0396US8288811B2Fortification of charge-storing material in high-K dielectric environments and resulting apparatusesRAMASWAMY D V NIRMAL·Filed 2010·Granted Oct 16, 2012·26 cites·47 claims
- 0495US11145710B1Electrode/dielectric barrier material formation and structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 12, 2021·5 cites·14 claims
- 0592US10192605B2Memory cells and semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 29, 2019·8 cites·20 claims
- 0690US10403630B2Semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 3, 2019·3 cites·20 claims
- 0790US2025098175A1Electronic devices including ferroelectric materials, and related memory devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0888US10177152B1Integrated assemblies comprising stud-type capacitorsMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 8, 2019·4 cites·23 claims
- 0988US9697881B2Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitorsMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 4, 2017·6 cites·20 claims
- 1087US9698343B2Semiconductor device structures including ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Jul 4, 2017·3 cites·16 claims
- 1186US11289487B2Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 29, 2022·3 cites·26 claims
- 1286US10811419B1Storage node shapingMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
- 1384US9899072B2Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitorsMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 20, 2018·4 cites·20 claims
- 1484US8940388B2Insulative elementsANTONOV VASSIL·Filed 2011·Granted Jan 27, 2015·6 cites·20 claims
- 1578US10062703B2Methods of forming a ferroelectric memory cellMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 28, 2018·1 cites·23 claims
- 1678US2022102630A1Resistive memory cellMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 1777US12167610B2Semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 10, 2024·0 cites·19 claims
- 1877US8637846B1Semiconductor structure including a zirconium oxide materialCOLLINS DALE W·Filed 2012·Granted Jan 28, 2014·3 cites·26 claims
- 1976US9466660B2Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structuresMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 11, 2016·5 cites·15 claims
- 2075US12507395B2Doped titanium nitride materials for dram capacitors, and related semiconductor devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 23, 2025·0 cites·17 claims
- 2171US11201286B2Resistive memory cellMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 14, 2021·0 cites·20 claims
- 2270US11043502B2Semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 22, 2021·0 cites·18 claims
- 2367US11417661B2Integrated assemblies comprising stud-type capacitorsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 16, 2022·0 cites·29 claims
- 2465US8847196B2Resistive memory cellROCKLEIN MATTHEW N·Filed 2011·Granted Sep 30, 2014·1 cites·16 claims
- 2562US2022028968A1Electrode/dielectric barrier material formation and structuresMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 2661US10586923B2Resistive memory cellMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 10, 2020·0 cites·15 claims
- 2760US12193208B2Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·15 claims
- 2860US10600788B2Integrated assemblies comprising stud-type capacitorsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 24, 2020·0 cites·18 claims
- 2960US9159921B2Resistive memory cellMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 13, 2015·0 cites·21 claims
- 3057US9006702B2Semiconductor structure including a zirconium oxide materialMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 14, 2015·0 cites·20 claims
- 3155US8987806B2Fortification of charge storing material in high K dielectric environments and resulting apparatusesRAMASWAMY D V NIRMAL·Filed 2012·Granted Mar 24, 2015·0 cites·21 claims
- 3255US2015380646A1Resistive memory cellMICRON TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 3354US10438643B2Devices and apparatuses including asymmetric ferroelectric materials, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 8, 2019·0 cites·20 claims
- 3454US9576805B2Fortification of charge-storing material in high-K dielectric environments and resulting apparatusesMICRON TECHNOLOGY INC·Filed 2015·Granted Feb 21, 2017·0 cites·20 claims
- 3553US12062688B2Dielectric materials, capacitors and memory arraysMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 13, 2024·0 cites·76 claims
- 3651US10985239B2Oxidative trimMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 20, 2021·0 cites·26 claims
- 3750US10964536B2Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratioMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·0 cites·20 claims
- 3847US11139256B2Tamper-resistant integrated circuits, and related methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 5, 2021·0 cites·27 claims
- 3945US2015140773A1Methods of forming insulative elementsMICRON TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 4044US11251261B2Forming a barrier material on an electrodeMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 15, 2022·0 cites·9 claims
- 4143US12046658B2Electrode formationMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 23, 2024·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →