Inventor · disambiguated record
Mary B. Rothwell
Also filed as: ROTHWELL MARY B · ROTHWELL MARY BETH · ROTHWELL MARY ELIZABETH
21 granted patents·6 pending applications·164 citations·filing 2002–2021
95Inventor score
Top patents by PatentIndex Score
27 records- 0198US9524470B1Modular array of vertically integrated superconducting qubit devices for scalable quantum computingIBM·Filed 2015·Granted Dec 20, 2016·51 cites·10 claims
- 0296US9953269B2Modular array of vertically integrated superconducting qubit devices for scalable quantum computingIBM·Filed 2016·Granted Apr 24, 2018·13 cites·15 claims
- 0392US10304005B2Modular array of vertically integrated superconducting qubit devices for scalable quantum computingIBM·Filed 2018·Granted May 28, 2019·5 cites·20 claims
- 0492US10170680B2Qubits by selective laser-modulated depositionIBM·Filed 2015·Granted Jan 1, 2019·11 cites·20 claims
- 0592US10169714B2Modular array of vertically integrated superconducting qubit devices for scalable quantum computingIBM·Filed 2016·Granted Jan 1, 2019·5 cites·17 claims
- 0689US7566632B1Lock and key structure for three-dimensional chip connection and process thereofIBM·Filed 2008·Granted Jul 28, 2009·19 cites·20 claims
- 0788US10304004B2Modular array of vertically integrated superconducting qubit devices for scalable quantum computingIBM·Filed 2018·Granted May 28, 2019·3 cites·18 claims
- 0885US6783717B2Process of fabricating a precision microcontact printing stampIBM·Filed 2002·Granted Aug 31, 2004·23 cites·12 claims
- 0983US10289960B2Modular array of vertically integrated superconducting qubit devices for scalable quantum computingIBM·Filed 2018·Granted May 14, 2019·2 cites·20 claims
- 1082US7608538B2Formation of vertical devices by electroplatingIBM·Filed 2007·Granted Oct 27, 2009·7 cites·16 claims
- 1177US10727391B2Bump bonded cryogenic chip carrierIBM·Filed 2017·Granted Jul 28, 2020·2 cites·25 claims
- 1275US7695897B2Structures and methods for low-k or ultra low-k interlayer dielectric pattern transferIBM·Filed 2006·Granted Apr 13, 2010·6 cites·18 claims
- 1362US7994639B2Microelectronic structure including dual damascene structure and high contrast alignment markIBM·Filed 2007·Granted Aug 9, 2011·2 cites·20 claims
- 1459US8119528B2Nanoscale electrodes for phase change memory devicesSCHROTT ALEJANDRO G·Filed 2008·Granted Feb 21, 2012·6 cites·1 claims
- 1558US8467221B2Magnetic spin shift register memoryJOSEPH ERIC A·Filed 2010·Granted Jun 18, 2013·2 cites·5 claims
- 1657US8247905B2Formation of vertical devices by electroplatingDELIGIANNI HARIKLIA·Filed 2009·Granted Aug 21, 2012·0 cites·13 claims
- 1757US6881366B2Process of fabricating a precision microcontact printing stampIBM·Filed 2002·Granted Apr 19, 2005·6 cites·17 claims
- 1855US10734567B2Bump bonded cryogenic chip carrierIBM·Filed 2018·Granted Aug 4, 2020·0 cites·20 claims
- 1955US2019109273A1Qubits by selective laser-modulated depositionIBM·Filed 2018·Application pending·0 cites
- 2051US7893549B2Microelectronic lithographic alignment using high contrast alignment markIBM·Filed 2007·Granted Feb 22, 2011·1 cites·12 claims
- 2147US2023189664A1Qubit Capacitor Trimming for Frequency TuningIBM·Filed 2021·Application pending·0 cites
- 2246US2010308380A1Dual damascene processing for gate conductor and active area to first metal level interconnect structuresIBM·Filed 2009·Application pending·0 cites
- 2344US2010196806A1Structures and methods for low-k or ultra low-k interlayer dielectric pattern transferIBM·Filed 2010·Application pending·0 cites
- 2443US2023187355A1Method to Produce Buried Nb Lines Surrounded by TiIBM·Filed 2021·Application pending·0 cites
- 2541US8518718B2Magnetic spin shift register memoryJOSEPH ERIC A·Filed 2012·Granted Aug 27, 2013·0 cites·14 claims
- 2639US8968583B2Cleaning process for microelectronic dielectric and metal structuresROTHWELL MARY BETH·Filed 2007·Granted Mar 3, 2015·0 cites·12 claims
- 2736US2003127002A1Multilayer architechture for microcontact printing stampsFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →