Inventor · disambiguated record
Manfred Ruehrig
Also filed as: RUEHRIG MANFRED
13 granted patents·3 pending applications·88 citations·filing 2003–2020
89Inventor score
Top patents by PatentIndex Score
16 records- 0195US7490522B2Magnetostrictive multilayer sensor and method for producing a sensorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 17, 2009·44 cites·24 claims
- 0283US7893511B2Integrated circuit, memory module, and method of manufacturing an integrated circuitQIMONDA AG·Filed 2008·Granted Feb 22, 2011·14 cites·13 claims
- 0375US7755936B2Integrated circuits, cell, cell arrangement, method of reading a cell, memory moduleQIMONDA AG·Filed 2008·Granted Jul 13, 2010·9 cites·19 claims
- 0473US7535217B2Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a forceINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 19, 2009·8 cites·24 claims
- 0564US7205596B2Adiabatic rotational switching memory element including a ferromagnetic decoupling layerINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 17, 2007·3 cites·7 claims
- 0661US10553325B2Scattered radiation grid with an amorphous material and its use in a scattered radiation gridSIEMENS HEALTHCARE GMBH·Filed 2017·Granted Feb 4, 2020·0 cites·15 claims
- 0760US9241679B2Method and apparatus for filtering high-frequency electromagnetic beams and irradiation apparatus or device for irradiating an objectSIEMENS AG·Filed 2013·Granted Jan 26, 2016·1 cites·19 claims
- 0853US11158436B2Filter system for the local attenuation of X-radiation, X-ray apparatus and method for locally changing the intensity of X-radiationSIEMENS HEALTHCARE GMBH·Filed 2020·Granted Oct 26, 2021·0 cites·18 claims
- 0951US7309617B2MRAM memory cell with a reference layer and method for fabricatingINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 18, 2007·7 cites·7 claims
- 1050US7566941B2Magnetoresistive memory cell and process for producing the sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jul 28, 2009·2 cites·10 claims
- 1146US10111314B2Energy generation by igniting flames of an electropositive metal by plasmatizing the reaction gasSIEMENS AG·Filed 2015·Granted Oct 23, 2018·0 cites·14 claims
- 1240US7280393B2MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 9, 2007·0 cites·5 claims
- 1337US7436700B2MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the sameINFINEON TECHNOLOGIES AG·Filed 2007·Granted Oct 14, 2008·0 cites·28 claims
- 1437US2005174838A1MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the sameFiled 2005·Application pending·0 cites
- 1534US2006251928A1Multilayer force sensor and method for determining a forceQUANDT ECKHARDT·Filed 2006·Application pending·0 cites
- 1632US2009027948A1Integrated Circuits, Method of Programming a Cell, Thermal Select Magnetoresistive Element, Memory ModuleRUEHRIG MANFRED·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →