Inventor · disambiguated record
Masao Sakuraba
Also filed as: SAKURABA MASAO
3 granted patents·2 pending applications·133 citations·filing 1995–2002
70Inventor score
Top patents by PatentIndex Score
5 records- 0192US5705224AVapor depositing methodKOKUSAI ELECTRIC CO LTD·Filed 1995·Granted Jan 6, 1998·126 cites·14 claims
- 0261US6621145B2Semiconductor device having a metal-semiconductor junction with a reduced contact resistanceUNIV TOHOKU·Filed 2001·Granted Sep 16, 2003·7 cites·3 claims
- 0340US6800544B2Semiconductor device having a metal-semiconductor junction with a reduced contact resistanceUNIV TOHOKU·Filed 2002·Granted Oct 5, 2004·0 cites·2 claims
- 0431US2002109135A1MOS field-effect transistor comprising layered structure including Si layer and SiGe layer OR SiGeC layer as channel regionsFiled 2002·Application pending·0 cites
- 0531US2002008289A1Mosfet with strained channel layerFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →