Inventor · disambiguated record
Mahesh Samant
Also filed as: SAMANT MAHESH · SAMANT MAHESH G · SAMANT MAHESH GOVIND
40 granted patents·14 pending applications·705 citations·filing 1998–2024
97Inventor score
Files withIBM32SAMSUNG ELECTRONICS CO LTD17ALTKNECHT DAVID J2INT BUSINESS MACHINES INCORPOR1JIANG XIN1
Top patents by PatentIndex Score
54 records- 0198US10177305B2Templating layers for perpendicularly magnetized heusler filmsIBM·Filed 2017·Granted Jan 8, 2019·12 cites·27 claims
- 0297US7276384B2Magnetic tunnel junctions with improved tunneling magneto-resistanceIBM·Filed 2005·Granted Oct 2, 2007·57 cites·13 claims
- 0396US10396123B2Templating layers for perpendicularly magnetized Heusler filmsIBM·Filed 2017·Granted Aug 27, 2019·9 cites·29 claims
- 0496US6518588B1Magnetic random access memory with thermally stable magnetic tunnel junction cellsIBM·Filed 2001·Granted Feb 11, 2003·141 cites·9 claims
- 0594US9825217B1Magnetic memory device having cobalt-iron-beryllium magnetic layersSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·11 cites·20 claims
- 0691US11804321B2Tunable templating layers for perpendicularly magnetized Heusler filmsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 31, 2023·2 cites·20 claims
- 0790US11665979B2Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 30, 2023·2 cites·11 claims
- 0890US10957848B2Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)IBM·Filed 2019·Granted Mar 23, 2021·3 cites·34 claims
- 0990US9761793B1Magnetic memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 12, 2017·7 cites·20 claims
- 1089US10937953B2Tunable tetragonal ferrimagnetic heusler compound with PMA and high TMRSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·3 cites·27 claims
- 1189US10170696B1MnN and Heusler layers in magnetic tunnel junctionsIBM·Filed 2017·Granted Jan 1, 2019·6 cites·16 claims
- 1288US7149105B2Magnetic tunnel junctions for MRAM devicesIBM·Filed 2004·Granted Dec 12, 2006·47 cites·74 claims
- 1386US6326637B1Antiferromagnetically exchange-coupled structure for magnetic tunnel junction deviceIBM·Filed 1999·Granted Dec 4, 2001·50 cites·19 claims
- 1485US10651234B2Templating layers for forming highly textured thin films of heusler compounds switchable by application of spin transfer torqueSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 12, 2020·2 cites·23 claims
- 1585US6020946ADry processing for liquid-crystal displays using low energy ion bombardmentIBM·Filed 1998·Granted Feb 1, 2000·83 cites·32 claims
- 1683US10247701B2Dissolved-oxygen sensor utilizing ionic oxygen motionIBM·Filed 2016·Granted Apr 2, 2019·2 cites·14 claims
- 1783US6061114AAlignment of liquid crystal layersIBM·Filed 1998·Granted May 9, 2000·71 cites·20 claims
- 1881US11005029B2Spin transfer torque switching of a magnetic layer with volume uniaxial magnetic crystalline anistotropySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 11, 2021·5 cites·20 claims
- 1978US8227896B2Resistive switching in nitrogen-doped MgOJIANG XIN·Filed 2009·Granted Jul 24, 2012·8 cites·33 claims
- 2077US6519018B1Vertically aligned liquid crystal displays and methods for their productionIBM·Filed 1998·Granted Feb 11, 2003·61 cites·24 claims
- 2176US9406365B1Underlayers for textured films of Heusler compoundsIBM·Filed 2015·Granted Aug 2, 2016·4 cites·18 claims
- 2276US6485614B2Method to stabilize a carbon alignment layer for liquid crystal displaysIBM·Filed 2000·Granted Nov 26, 2002·16 cites·14 claims
- 2373US11557721B2Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)IBM·Filed 2021·Granted Jan 17, 2023·0 cites·25 claims
- 2473US6313896B1Method for forming a multi-domain alignment layer for a liquid crystal display deviceIBM·Filed 1999·Granted Nov 6, 2001·50 cites·12 claims
- 2569US12136447B2Tetragonal half metallic half-Heusler compoundsIBM·Filed 2022·Granted Nov 5, 2024·0 cites·25 claims
- 2669US12094508B1Magnetic tunneling junction switching with parallel spin-momentum locked spin currentSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·17 claims
- 2768US11756578B2Ferrimagnetic Heusler compounds with high spin polarizationSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 2865US6061115AMethod of producing a multi-domain alignment layer by bombarding ions of normal incidenceINT BUSINESS MACHINES INCORPOR·Filed 1998·Granted May 9, 2000·37 cites·17 claims
- 2964US11538987B2IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·20 claims
- 3064US9666215B2Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropyIBM·Filed 2015·Granted May 30, 2017·2 cites·15 claims
- 3164US2025204269A1Neuromorphic devices of heusler alloy based spin-transfer-torque magnetic tunnel junctionsIBM·Filed 2023·Application pending·0 cites
- 3263US11925124B2Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic dampingSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·11 claims
- 3363US11751486B2Templating layers for perpendicularly magnetized Heusler films/compoundsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 5, 2023·0 cites·20 claims
- 3462US2024349619A1Nitride seed layer with high thermal stability for growth of perpendicularly magnetized heusler filmsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3559US6313461B1Scanning-aperture electron microscope for magnetic imagingIBM·Filed 1999·Granted Nov 6, 2001·13 cites·30 claims
- 3658US8936293B2Robotic device for substrate transfer applicationsLADA CHRISTOPHER O·Filed 2011·Granted Jan 20, 2015·1 cites·20 claims
- 3758US2024349622A1Templating layers for growth of perpendicularly magnetized heusler filmsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3858US2024347089A1Fe-x templating layers for growth of perpendicularly magnetized heusler films on top of a tunnel barrierSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3956US2025057050A1Interfacial nitridation for growth of perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 4055US12317508B2Tuning perpendicular magnetic anisotropy of Heusler compound in MRAM devicesIBM·Filed 2021·Granted May 27, 2025·0 cites·21 claims
- 4155US2025338779A1Lattice-matched oxide layer as tunnel barrier for perpendicularly magnetized heusler compoundsIBM·Filed 2024·Application pending·0 cites
- 4255US2025201290A1Heusler alloy based spin-transfer-torque magnetic tunnel junctions for flash memory and the likeIBM·Filed 2023·Application pending·0 cites
- 4354US2025261567A1Material stack with improved device performance in perpendicularly magnetized heusler filmsIBM·Filed 2024·Application pending·0 cites
- 4453US2024155950A1Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 4553US2025151628A1Mn-Sb COMPOUNDS FOR MAGNETIC RANDOM ACCESS MEMORY FREE LAYERSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4651US2024306517A1Templating layers for spin orbit torque assisted switching of perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 4750US2023180624A1Magnetic tunnel junction including hexagonal multi-layered structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4848US12274179B2Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler filmsIBM·Filed 2022·Granted Apr 8, 2025·0 cites·25 claims
- 4948US10256490B2Oxygen-separating device utilizing ionic oxygen motionIBM·Filed 2016·Granted Apr 9, 2019·0 cites·14 claims
- 5046US9590176B2Controlling the conductivity of an oxide by applying voltage pulses to an ionic liquidIBM·Filed 2013·Granted Mar 7, 2017·0 cites·16 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →