Inventor · disambiguated record
Masaru Senoo
Also filed as: SENOO MASARU
37 granted patents·10 pending applications·79 citations·filing 2008–2025
96Inventor score
Files withTOYOTA MOTOR CO LTD22SENOO MASARU15DENSO CORP7HIRABAYASHI YASUHIRO1TOYOTA CHUO KENKYUSHO KK1
Top patents by PatentIndex Score
47 records- 0191US9520487B2Reverse conducting insulated gate bipolar transistorTOYOTA MOTOR CO LTD·Filed 2015·Granted Dec 13, 2016·9 cites·2 claims
- 0290US9853024B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2015·Granted Dec 26, 2017·8 cites·6 claims
- 0390US9530836B2Semiconductor apparatusTOYOTA MOTOR CO LTD·Filed 2016·Granted Dec 27, 2016·7 cites·5 claims
- 0484US9064711B2Semiconductor device and method for fabricating semiconductor deviceSENOO MASARU·Filed 2011·Granted Jun 23, 2015·8 cites·6 claims
- 0583US9865728B2Switching deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Jan 9, 2018·5 cites·4 claims
- 0681US9035415B2Vertical semiconductor device comprising a resurf structureSENOO MASARU·Filed 2011·Granted May 19, 2015·6 cites·3 claims
- 0778US9178014B2Semiconductor deviceSENOO MASARU·Filed 2012·Granted Nov 3, 2015·5 cites·3 claims
- 0876US8242535B2IGBT and method of producing the sameSENOO MASARU·Filed 2009·Granted Aug 14, 2012·5 cites·4 claims
- 0974US9589952B2Reverse conducting IGBTTOYOTA MOTOR CO LTD·Filed 2016·Granted Mar 7, 2017·2 cites·9 claims
- 1074US2025301773A1Semiconductor deviceDENSO CORP·Filed 2025·Application pending·0 cites
- 1174US2025294826A1Igbt including field stop layer formed between collector layer and drift layerDENSO CORP·Filed 2025·Application pending·0 cites
- 1273US9437700B2Semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2015·Granted Sep 6, 2016·2 cites·6 claims
- 1369US8674511B2Method of forming a semiconductor device with a contact pad on a sloped silicon dioxide surfaceSENOO MASARU·Filed 2012·Granted Mar 18, 2014·2 cites·4 claims
- 1469US8476732B2Semiconductor deviceSENOO MASARU·Filed 2008·Granted Jul 2, 2013·4 cites·4 claims
- 1568US10256232B2Semiconductor device including a switching element and a sense diodeTOYOTA MOTOR CO LTD·Filed 2018·Granted Apr 9, 2019·1 cites·4 claims
- 1667US9147758B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2014·Granted Sep 29, 2015·2 cites·6 claims
- 1766US12363997B2Semiconductor deviceDENSO CORP·Filed 2022·Granted Jul 15, 2025·0 cites·2 claims
- 1866US9786746B2Semiconductor device with improved reverse recovery characteristicsTOYOTA MOTOR CO LTD·Filed 2016·Granted Oct 10, 2017·1 cites·4 claims
- 1966US9276137B2Diode and semiconductor device including built-in diodeYAMASHITA YUSUKE·Filed 2014·Granted Mar 1, 2016·2 cites·6 claims
- 2066US9048085B2Semiconductor deviceSENOO MASARU·Filed 2013·Granted Jun 2, 2015·2 cites·2 claims
- 2165US9601592B2IGBT and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2015·Granted Mar 21, 2017·1 cites·6 claims
- 2264US9691888B1IgbtTOYOTA MOTOR CO LTD·Filed 2016·Granted Jun 27, 2017·1 cites·4 claims
- 2364US9412809B2Semiconductor device and manufacturing method thereofSENOO MASARU·Filed 2013·Granted Aug 9, 2016·1 cites·6 claims
- 2461US9190503B2IGBT and method of manufacturing the sameSENOO MASARU·Filed 2011·Granted Nov 17, 2015·1 cites·6 claims
- 2561US9082842B2Semiconductor deviceHIRABAYASHI YASUHIRO·Filed 2011·Granted Jul 14, 2015·2 cites·2 claims
- 2658US8735974B2Semiconductor devicesSENOO MASARU·Filed 2010·Granted May 27, 2014·1 cites·9 claims
- 2758US8169087B2Semiconductor deviceSENOO MASARU·Filed 2009·Granted May 1, 2012·1 cites·7 claims
- 2858US2021217845A1Semiconductor deviceDENSO CORP·Filed 2021·Application pending·0 cites
- 2951US2010258943A1Semiconductor deviceSENOO MASARU·Filed 2008·Application pending·0 cites
- 3047US8952553B2Semiconductor device with stress relaxation during wire-bondingSENOO MASARU·Filed 2009·Granted Feb 10, 2015·0 cites·9 claims
- 3146US10163890B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2018·Granted Dec 25, 2018·0 cites·13 claims
- 3245US2019287963A1Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2019·Application pending·0 cites
- 3344US12191381B2Semiconductor deviceDENSO CORP·Filed 2022·Granted Jan 7, 2025·0 cites·5 claims
- 3443US11476355B2Semiconductor deviceDENSO CORP·Filed 2021·Granted Oct 18, 2022·0 cites·11 claims
- 3543US2016276469A1Vertical-type semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2014·Application pending·0 cites
- 3640US10700054B2Semiconductor apparatusDENSO CORP·Filed 2018·Granted Jun 30, 2020·0 cites·10 claims
- 3740US9595603B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2016·Granted Mar 14, 2017·0 cites·5 claims
- 3839US9000478B2Vertical IGBT adjacent a RESURF regionSENOO MASARU·Filed 2012·Granted Apr 7, 2015·0 cites·14 claims
- 3939US8610204B2Semiconductor deviceSENOO MASARU·Filed 2011·Granted Dec 17, 2013·0 cites·2 claims
- 4038US9536961B2Reverse conducting insulated gate bipolar transistorTOYOTA MOTOR CO LTD·Filed 2015·Granted Jan 3, 2017·0 cites·5 claims
- 4137US2017040442A1IgbtTOYOTA MOTOR CO LTD·Filed 2016·Application pending·0 cites
- 4235US9666579B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2016·Granted May 30, 2017·0 cites·5 claims
- 4335US2019051648A1Diode and semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2016·Application pending·0 cites
- 4434US9437719B2Method for manufacturing semiconductor device having grooved surfaceTOYOTA MOTOR CO LTD·Filed 2015·Granted Sep 6, 2016·0 cites·14 claims
- 4534US9437720B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2015·Granted Sep 6, 2016·0 cites·4 claims
- 4633US2016111529A1Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2015·Application pending·0 cites
- 4732US2016233858A1Switching circuit and semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →