Inventor · disambiguated record
Masatomo Shibata
Also filed as: SHIBATA MASATOMO
36 granted patents·12 pending applications·728 citations·filing 1998–2025
97Inventor score
Top patents by PatentIndex Score
48 records- 0197US7435608B2III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor waferHITACHI CABLE·Filed 2006·Granted Oct 14, 2008·30 cites·15 claims
- 0296US7674699B2III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereofHITACHI CABLE·Filed 2006·Granted Mar 9, 2010·44 cites·2 claims
- 0396US6270569B1Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth methodHITACHI CABLE·Filed 1998·Granted Aug 7, 2001·200 cites·36 claims
- 0495US6924159B2Semiconductor substrate made of group III nitride, and process for manufacture thereofHITACHI CABLE·Filed 2002·Granted Aug 2, 2005·113 cites·37 claims
- 0594US12258678B2Gallium nitride single crystal substrateSUMITOMO CHEMICAL CO·Filed 2024·Granted Mar 25, 2025·2 cites·6 claims
- 0693US7847313B2Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting deviceHITACHI CABLE·Filed 2007·Granted Dec 7, 2010·27 cites·16 claims
- 0793US7230282B2III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor waferHITACHI CABLE·Filed 2005·Granted Jun 12, 2007·22 cites·1 claims
- 0887US10978296B2Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminateSCIOCS CO LTD·Filed 2018·Granted Apr 13, 2021·4 cites·9 claims
- 0985US7790489B2III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor waferHITACHI CABLE·Filed 2007·Granted Sep 7, 2010·9 cites·8 claims
- 1085US7196399B2Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation densityHITACHI CABLE·Filed 2004·Granted Mar 27, 2007·29 cites·16 claims
- 1184US7981713B2Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the sameHITACHI CABLE·Filed 2008·Granted Jul 19, 2011·8 cites·2 claims
- 1284US7276779B2III-V group nitride system semiconductor substrateHITACHI CABLE·Filed 2004·Granted Oct 2, 2007·27 cites·16 claims
- 1384US7189588B2Group III nitride semiconductor substrate and its manufacturing methodHITACHI CABLE·Filed 2003·Granted Mar 13, 2007·30 cites·33 claims
- 1484US6824610B2Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrateNEC CORP·Filed 2002·Granted Nov 30, 2004·37 cites·14 claims
- 1584US6812051B2Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structureNEC CORP·Filed 2002·Granted Nov 2, 2004·26 cites·51 claims
- 1682US7253499B2III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor waferHITACHI CABLE·Filed 2004·Granted Aug 7, 2007·26 cites·15 claims
- 1781US7935615B2III-V nitride semiconductor substrate and its production methodHITACHI CABLE·Filed 2007·Granted May 3, 2011·6 cites·16 claims
- 1881US7622791B2III-V group nitride system semiconductor substrateHITACHI CABLE·Filed 2007·Granted Nov 24, 2009·6 cites·12 claims
- 1979US7271404B2Group III-V nitride-based semiconductor substrate and method of making sameHITACHI CABLE·Filed 2005·Granted Sep 18, 2007·6 cites·8 claims
- 2077US7118934B2Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrateHITACHI CABLE·Filed 2004·Granted Oct 10, 2006·18 cites·35 claims
- 2176US7097920B2Group III nitride based semiconductor substrate and process for manufacture thereofHITACHI CABLE·Filed 2003·Granted Aug 29, 2006·16 cites·16 claims
- 2272US8207054B2Group III nitride semiconductor substrate, substrate for group III nitride semiconductor device, and methods of making sameSHIBATA MASATOMO·Filed 2009·Granted Jun 26, 2012·4 cites·4 claims
- 2371US10290489B2Method for manufacturing group-III nitride substrate and group-III nitride substrateSCIOCS CO LTD·Filed 2017·Granted May 14, 2019·1 cites·19 claims
- 2471US7288830B2III-V nitride semiconductor substrate and its production methodHITACHI CABLE·Filed 2004·Granted Oct 30, 2007·11 cites·22 claims
- 2569US7829913B2Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing methodHITACHI CABLE·Filed 2003·Granted Nov 9, 2010·15 cites·13 claims
- 2663US11718927B2Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or moreSUMITOMO CHEMICAL CO·Filed 2019·Granted Aug 8, 2023·0 cites·3 claims
- 2761US10253432B2Semiconductor substrate manufacturing methodSUMITOMO CHEMICAL CO·Filed 2014·Granted Apr 9, 2019·0 cites·24 claims
- 2859US7045808B2III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production methodHITACHI CABLE·Filed 2004·Granted May 16, 2006·6 cites·8 claims
- 2957US7057204B2III-V group nitride system semiconductor substrateHITACHI CABLE·Filed 2004·Granted Jun 6, 2006·5 cites·14 claims
- 3056US2025263868A1Gallium nitride single crystal substrate and method for producing the sameSUMITOMO CHEMICAL CO·Filed 2025·Application pending·0 cites
- 3156US2023314359A1Electrochemical sensorSUMITOMO CHEMICAL CO·Filed 2021·Application pending·0 cites
- 3255US2025263866A1Gallium nitride single crystal substrate and method for producing the sameSUMITOMO CHEMICAL CO·Filed 2025·Application pending·0 cites
- 3353US2014109825A1Equipment and method for producing crystal by vertical boat methodHITACHI METALS LTD·Filed 2013·Application pending·0 cites
- 3450US2007221954A1Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the sameHITACHI CABLE·Filed 2006·Application pending·0 cites
- 3549US8101939B2GaN single-crystal substrate and method for producing GaN single crystalOSHIMA YUICHI·Filed 2008·Granted Jan 24, 2012·0 cites·15 claims
- 3648US10998188B2Gallium nitride laminated substrate and semiconductor deviceUNIV HOSEI·Filed 2019·Granted May 4, 2021·0 cites·13 claims
- 3748US10100434B2Nitride semiconductor single crystal substrate manufacturing methodSUMITOMO CHEMICAL CO·Filed 2014·Granted Oct 16, 2018·0 cites·32 claims
- 3847US10584031B2Nitride crystal substrateSCIOCS CO LTD·Filed 2017·Granted Mar 10, 2020·0 cites·8 claims
- 3947US2005274976A1III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor waferHITACHI CABLE·Filed 2004·Application pending·0 cites
- 4046US2017314157A1Method for manufacturing nitride crystal substrate and substrate for crystal growthUNIV OSAKA·Filed 2017·Application pending·0 cites
- 4145US2006191467A1Group iii nitride based semiconductor substrate and process for manufacture thereofUSUI AKIRA·Filed 2006·Application pending·0 cites
- 4243US2007215901A1Group III-V nitride-based semiconductor substrate and method of fabricating the sameHITACHI CABLE·Filed 2006·Application pending·0 cites
- 4343US2007176199A1Nitride-based group III-V semiconductor substrate and fabrication method therefor, and nitride-based group III-V light-emitting deviceHITACHI CABLE·Filed 2006·Application pending·0 cites
- 4442US10309036B2Method for manufacturing group-III nitride semiconductor crystal substrateUNIV OSAKA·Filed 2016·Granted Jun 4, 2019·0 cites·19 claims
- 4542US2004224434A1Method of forming a semiconductor structure for use in a light emitting diode and a semiconductor structureHITACHI CABLE·Filed 2004·Application pending·0 cites
- 4641US10260165B2Method for manufacturing nitride crystal substrate and substrate for crystal growthUNIV OSAKA·Filed 2017·Granted Apr 16, 2019·0 cites·9 claims
- 4738US2002145146A1LED of AlGaInP system and epitaxial wafer used for sameFiled 2000·Application pending·0 cites
- 4834US10266965B2Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystalUNIV OSAKA·Filed 2015·Granted Apr 23, 2019·0 cites·35 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →