Inventor · disambiguated record
Masayuki Shimuta
Also filed as: SHIMUTA MASAYUKI
17 granted patents·1 pending application·34 citations·filing 2011–2020
90Inventor score
Top patents by PatentIndex Score
18 records- 0188US8427860B2Memory component, memory device, and method of operating memory deviceOHBA KAZUHIRO·Filed 2011·Granted Apr 23, 2013·10 cites·22 claims
- 0279US9058873B2Memory element having ion source layers with different contents of a chalcogen elementSHIMUTA MASAYUKI·Filed 2012·Granted Jun 16, 2015·8 cites·12 claims
- 0377US8699260B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2012·Granted Apr 15, 2014·5 cites·14 claims
- 0473US8730709B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2013·Granted May 20, 2014·3 cites·14 claims
- 0571US9543514B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2015·Granted Jan 10, 2017·2 cites·12 claims
- 0668US9240549B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2014·Granted Jan 19, 2016·2 cites·20 claims
- 0762US8912516B2Memory element with ion source layer and memory deviceOHBA KAZUHIRO·Filed 2012·Granted Dec 16, 2014·2 cites·14 claims
- 0861US8885385B2Memory element and memory deviceMIZUGUCHI TETSUYA·Filed 2012·Granted Nov 11, 2014·2 cites·14 claims
- 0952US8546782B2Memory element and memory deviceYASUDA SHUICHIRO·Filed 2011·Granted Oct 1, 2013·0 cites·8 claims
- 1051US9263670B2Memory element and memory deviceSONY CORP·Filed 2013·Granted Feb 16, 2016·0 cites·8 claims
- 1148US9231200B2Memory element and memory deviceSONY CORP·Filed 2014·Granted Jan 5, 2016·0 cites·16 claims
- 1247US9356232B2Method of making memory element with ion source layer comprised of two or more unit IO source layersSONY CORP·Filed 2014·Granted May 31, 2016·0 cites·18 claims
- 1347US9203018B2Memory element and memory deviceSONY CORP·Filed 2014·Granted Dec 1, 2015·0 cites·17 claims
- 1441US9202560B2Memory element and memory device with ion source layer and resistance change layerMIZUGUCHI TETSUYA·Filed 2012·Granted Dec 1, 2015·0 cites·11 claims
- 1541US8796657B2Memory element and memory deviceYASUDA SHUICHIRO·Filed 2012·Granted Aug 5, 2014·0 cites·11 claims
- 1637US9112149B2Memory element and method of manufacturing the same, and memory deviceSEI HIROAKI·Filed 2011·Granted Aug 18, 2015·0 cites·13 claims
- 1737US2022238602A1Selection element, memory cell, and storage deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Application pending·0 cites
- 1835US8687404B2Memory element and drive method for the same, and memory deviceSHIMUTA MASAYUKI·Filed 2011·Granted Apr 1, 2014·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →