Inventor · disambiguated record
Mayank Shrivastava
Also filed as: SHRIVASTAVA MAYANK
32 granted patents·2 pending applications·114 citations·filing 2008–2025
96Inventor score
Files withINDIAN INST SCIENT12SHRIVASTAVA MAYANK10INFINEON TECHNOLOGIES AG7INTEL IP CORP2INTEL DEUTSCHLAND GMBH1
Top patents by PatentIndex Score
34 records- 0195US8664720B2High voltage semiconductor devicesSHRIVASTAVA MAYANK·Filed 2010·Granted Mar 4, 2014·26 cites·44 claims
- 0293US8536648B2Drain extended field effect transistors and methods of formation thereofSHRIVASTAVA MAYANK·Filed 2011·Granted Sep 17, 2013·12 cites·33 claims
- 0389US8963201B2Tunable fin-SCR for robust ESD protectionSHRIVASTAVA MAYANK·Filed 2012·Granted Feb 24, 2015·10 cites·25 claims
- 0487US8681461B2Selective current pumping to enhance low-voltage ESD clamping using high voltage devicesSHRIVASTAVA MAYANK·Filed 2012·Granted Mar 25, 2014·7 cites·24 claims
- 0584US10553712B2High-electron-mobility transistor (HEMT)INDIAN INST SCIENT·Filed 2018·Granted Feb 4, 2020·4 cites·18 claims
- 0683US8785968B2Silicon controlled rectifier (SCR) device for bulk FinFET technologySHRIVASTAVA MAYANK·Filed 2012·Granted Jul 22, 2014·7 cites·20 claims
- 0783US8629420B1Drain extended MOS device for bulk FinFET technologySHRIVASTAVA MAYANK·Filed 2012·Granted Jan 14, 2014·7 cites·19 claims
- 0882US9608098B2Tunable FIN-SCR for robust ESD protectionINTEL DEUTSCHLAND GMBH·Filed 2015·Granted Mar 28, 2017·3 cites·26 claims
- 0981US8455947B2Device and method for coupling first and second device portionsSHRIVASTAVA MAYANK·Filed 2009·Granted Jun 4, 2013·10 cites·21 claims
- 1080US9647069B2Drain extended field effect transistors and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 9, 2017·2 cites·23 claims
- 1179US8701063B1Compressing scenarios of electronic circuitsSYNOPSYS INC·Filed 2012·Granted Apr 15, 2014·9 cites·19 claims
- 1279US8354710B2Field-effect device and manufacturing method thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jan 15, 2013·5 cites·33 claims
- 1375US10319662B2Non-planar electrostatic discharge (ESD) protection devices with nano heat sinksINDIAN INST SCIENT·Filed 2018·Granted Jun 11, 2019·2 cites·23 claims
- 1465US10840348B2Enhancement mode high electron mobility transistor (HEMT)INDIAN INST SCIENT·Filed 2018·Granted Nov 17, 2020·1 cites·12 claims
- 1564US11031493B2Doping and trap profile engineering in GaN buffer to maximize AlGaN/GaN HEMT EPI stack breakdown voltageINDIAN INST SCIENT·Filed 2019·Granted Jun 8, 2021·1 cites·13 claims
- 1662US8643090B2Semiconductor devices and methods for manufacturing a semiconductor deviceSHRIVASTAVA MAYANK·Filed 2009·Granted Feb 4, 2014·2 cites·16 claims
- 1761US8097930B2Semiconductor devices with trench isolationsSHRIVASTAVA MAYANK·Filed 2008·Granted Jan 17, 2012·2 cites·36 claims
- 1860US8089314B2Operational amplifier having improved slew rateTHAKKER RAJESH A·Filed 2010·Granted Jan 3, 2012·4 cites·20 claims
- 1957US9087892B2Drain extended field effect transistors and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 21, 2015·0 cites·26 claims
- 2055US2025331215A1GATE METALLIZATION DESIGN FOR e-MODE GaN HEMTSINDIAN INST SCIENT·Filed 2025·Application pending·0 cites
- 2154US9035375B2Field-effect device and manufacturing method thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 19, 2015·0 cites·24 claims
- 2253US2025324645A1Stress transfer layer for a high electron mobility transistorINDIAN INST SCIENT·Filed 2025·Application pending·0 cites
- 2352US9455275B2High voltage semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2014·Granted Sep 27, 2016·0 cites·30 claims
- 2452US9401352B2Field-effect device and manufacturing method thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 26, 2016·0 cites·20 claims
- 2551US10483258B2Semiconductor devices and methods to enhance electrostatic discharge (ESD) robustness, latch-up, and hot carrier immunityINDIAN INST SCIENT·Filed 2018·Granted Nov 19, 2019·0 cites·8 claims
- 2649US9595516B2Semiconductor devices and arrangements including dummy gates for electrostatic discharge protectionINTEL IP CORP·Filed 2016·Granted Mar 14, 2017·0 cites·9 claims
- 2749US9368573B2Methods for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 14, 2016·0 cites·18 claims
- 2849US9356013B2Semiconductor devices and arrangements for electrostatic (ESD) protectionINTEL IP CORP·Filed 2013·Granted May 31, 2016·0 cites·13 claims
- 2949US8654491B2Low voltage ESD clamping using high voltage devicesSHRIVASTAVA MAYANK·Filed 2012·Granted Feb 18, 2014·0 cites·24 claims
- 3048US10211200B2Low trigger and holding voltage silicon controlled rectifier (SCR) for non-planar technologiesINDIAN INST SCIENT·Filed 2018·Granted Feb 19, 2019·0 cites·17 claims
- 3146US11393923B2Drain extended tunnel field effect transistorINDIAN INST SCIENT·Filed 2017·Granted Jul 19, 2022·0 cites·18 claims
- 3245US10629586B2Dual fin silicon controlled rectifier (SCR) electrostatic discharge (ESD) protection deviceINDIAN INST SCIENT·Filed 2018·Granted Apr 21, 2020·0 cites·18 claims
- 3345US10535762B2FinFET SCR with SCR implant under anode and cathode junctionsINDIAN INST SCIENT·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 3439US11522078B2High electron mobility transistor (HEMT) with RESURF junctionINDIAN INST SCIENT·Filed 2018·Granted Dec 6, 2022·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →