Inventor · disambiguated record
Marko J. Tadjer
Also filed as: TADJER MARKO J
26 granted patents·12 pending applications·51 citations·filing 2008–2025
94Inventor score
Top patents by PatentIndex Score
38 records- 0196US11201058B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2020·Granted Dec 14, 2021·6 cites·8 claims
- 0288US11532478B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2021·Granted Dec 20, 2022·1 cites·18 claims
- 0388US9159641B2Nanocrystalline diamond three-dimensional films in patterned semiconductor substratesHOBART KARL D·Filed 2014·Granted Oct 13, 2015·8 cites·8 claims
- 0485US9466684B2Transistor with diamond gateUS NAVY·Filed 2016·Granted Oct 11, 2016·4 cites·7 claims
- 0584US9305858B2Nanocrystalline diamond three-dimensional films in patterned semiconductor substratesHOBART KARL D·Filed 2015·Granted Apr 5, 2016·4 cites·20 claims
- 0683US9331163B2Transistor with diamond gateKOEHLER ANDREW D·Filed 2014·Granted May 3, 2016·8 cites·11 claims
- 0780US11817318B2GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the sameUS GOV SEC NAVY·Filed 2023·Granted Nov 14, 2023·0 cites·9 claims
- 0880US9960266B2Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistorsUS NAVY·Filed 2017·Granted May 1, 2018·3 cites·27 claims
- 0973US10777644B2Heterojunction devices and methods for fabricating the sameUS GOV SEC NAVY·Filed 2018·Granted Sep 15, 2020·1 cites·15 claims
- 1073US9129799B2Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphologyMAHADIK NADEEMULLAH A·Filed 2014·Granted Sep 8, 2015·4 cites·12 claims
- 1172US9196703B2Selective deposition of diamond in thermal viasNORTHROP GRUMMAN SYSTEMS CORP·Filed 2014·Granted Nov 24, 2015·3 cites·20 claims
- 1271US2022254639A1GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabricating Devices Incorporating the SameUS GOV SEC NAVY·Filed 2022·Application pending·0 cites
- 1370US8445383B2Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devicesHOBART KARL D·Filed 2008·Granted May 21, 2013·5 cites·16 claims
- 1468US10312175B1Diamond air bridge for thermal management of high power devicesUS NAVY·Filed 2018·Granted Jun 4, 2019·1 cites·14 claims
- 1565US11342420B2Heterojunction devices and methods for fabricating the sameUS GOV SEC NAVY·Filed 2020·Granted May 24, 2022·0 cites·16 claims
- 1665US10020366B2Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphologyUS NAVY·Filed 2016·Granted Jul 10, 2018·1 cites·20 claims
- 1762US2015362763A1Variable Emittance WindowWHEELER VIRGINIA D·Filed 2015·Application pending·0 cites
- 1860US12446249B2Polarization-engineered heterogeneous semiconductor heterostructuresUS GOV SEC NAVY·Filed 2022·Granted Oct 14, 2025·0 cites·23 claims
- 1960US11634834B2Diamond on nanopatterned substrateUS GOV SEC NAVY·Filed 2021·Granted Apr 25, 2023·0 cites·7 claims
- 2058US2025194194A1Radiation doped semiconductor junctionsUS GOV SEC NAVY·Filed 2024·Application pending·0 cites
- 2157US2024234139A9Diamond-Capped Gallium Oxide TransistorUS GOV SEC NAVY·Filed 2023·Application pending·0 cites
- 2255US12513922B2β-Ga2O3 junction barrier Schottky (JBS) diodes with sputtered p-type NiOUS GOV SEC NAVY·Filed 2023·Granted Dec 30, 2025·0 cites·10 claims
- 2355US2017261376A1Method of Making a Variable Emittance WindowUS GOV SEC NAVY·Filed 2017·Application pending·0 cites
- 2455US2023352600A1Gallium Oxide Planar MOS-Schottky RectifierUS GOV SEC NAVY·Filed 2023·Application pending·0 cites
- 2555US2025253067A1Semiconductor betavoltaic battery with integrated beta emitterHOBART KARL D·Filed 2024·Application pending·0 cites
- 2655US2025244267A1Surface temperature assesment of ultrawide bandgap materials using visible wavelength thermoreflectance thermal imaging (tti)US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 2754US2025275205A1P-type spinel structures as a p-n heteroepitaxial interface to b-ga2o3US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 2853US12243916B2Polarization-engineered heterogeneous semiconductor heterostructuresUS GOV SEC NAVY·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2953US10424643B2Diamond air bridge for thermal management of high power devicesUS GOV SEC NAVY·Filed 2019·Granted Sep 24, 2019·0 cites·9 claims
- 3052US11131039B2Diamond on nanopatterned substrateUS GOV SEC NAVY·Filed 2019·Granted Sep 28, 2021·0 cites·7 claims
- 3151US2025275206A1Plasma-free etched b-ga2o3-nio merged pin schottky diode with high-voltage stress reliabilityUS GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 3250US12020985B2Transferring large-area group III-nitride semiconductor material and devices to arbitrary substratesUS GOV SEC NAVY·Filed 2021·Granted Jun 25, 2024·0 cites·18 claims
- 3349US2024312793A1Thermal Neutron Transmutation Doped Gallium Oxide SemiconductorTADJER MARKO J·Filed 2024·Application pending·0 cites
- 3448US2015362374A1Atomic Layer Deposition of Vanadium Oxide for Microbolometer and ImagerWHEELER VIRGINIA D·Filed 2015·Application pending·0 cites
- 3547US9991354B2Metal nitride alloy contact for semiconductorUS NAVY·Filed 2017·Granted Jun 5, 2018·0 cites·20 claims
- 3647US7915143B2Method of mediating forward voltage drift in a SiC deviceUS NAVY·Filed 2009·Granted Mar 29, 2011·2 cites·7 claims
- 3743US11171055B2UV laser slicing of β-Ga2O3 by micro-crack generation and propagationThe Government of the United State of America as represented by the Secretary of the Navy·Filed 2020·Granted Nov 9, 2021·0 cites·21 claims
- 3827US10403509B2Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealingTADJER MARKO J·Filed 2015·Granted Sep 3, 2019·0 cites·6 claims
Join the waitlist — get patent alerts
Get an alert when Marko J. Tadjer files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →