Inventor · disambiguated record
Masakatsu Takashita
Also filed as: TAKASHITA MASAKATSU
10 granted patents·4 pending applications·202 citations·filing 1996–2010
90Inventor score
Top patents by PatentIndex Score
14 records- 0196US8013360B2Semiconductor device having a junction of P type pillar region and N type pillar regionTOSHIBA KK·Filed 2010·Granted Sep 6, 2011·29 cites·8 claims
- 0295US7737469B2Semiconductor device having superjunction structure formed of p-type and n-type pillar regionsTOSHIBA KK·Filed 2007·Granted Jun 15, 2010·36 cites·9 claims
- 0384US7605426B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 20, 2009·11 cites·20 claims
- 0482US7622771B2Semiconductor apparatusTOSHIBA KK·Filed 2008·Granted Nov 24, 2009·10 cites·20 claims
- 0581US7759732B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jul 20, 2010·8 cites·9 claims
- 0681US5721455ASemiconductor device having a thermal resistance detector in the heat radiating pathTOSHIBA KK·Filed 1996·Granted Feb 24, 1998·70 cites·5 claims
- 0772US8907420B2Power semiconductor deviceSAITO WATARU·Filed 2010·Granted Dec 9, 2014·3 cites·10 claims
- 0868US8283720B2Power semiconductor deviceSAITO WATARU·Filed 2008·Granted Oct 9, 2012·5 cites·20 claims
- 0968US8227854B2Semiconductor device having first and second resurf layersONO SYOTARO·Filed 2007·Granted Jul 24, 2012·4 cites·20 claims
- 1066US6002153AMOS type semiconductor device with a current detecting functionTOSHIBA KK·Filed 1996·Granted Dec 14, 1999·26 cites·13 claims
- 1147US2008315297A1Semiconductor deviceTOSHIBA KK·Filed 2008·Application pending·0 cites
- 1245US2007267664A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 1344US2009273031A1Semiconductor deviceTOSHIBA KK·Filed 2009·Application pending·0 cites
- 1441US2009302376A1Semiconductor deviceTOSHIBA KK·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →