Inventor · disambiguated record
Mamoru Tashiro
Also filed as: TASHIRO MAMORU
15 granted patents·1 pending application·374 citations·filing 1979–2005
94Inventor score
Top patents by PatentIndex Score
16 records- 0189US4811684APhoto CVD apparatus, with deposition prevention in light source chamberSEMICONDUCTOR ENERGY LAB·Filed 1987·Granted Mar 14, 1989·54 cites·5 claims
- 0289US4636401AApparatus for chemical vapor deposition and method of film deposition using such depositionSEMICONDUCTOR ENERGY LAB·Filed 1985·Granted Jan 13, 1987·89 cites·15 claims
- 0388US4857139AMethod and apparatus for forming a layerSEMICONDUCTOR ENERGY LAB·Filed 1988·Granted Aug 15, 1989·56 cites·28 claims
- 0483US4444873AColor photographic processingFUJI PHOTO FILM CO LTD·Filed 1982·Granted Apr 24, 1984·18 cites·14 claims
- 0581US4316753AMethod for producing low alloy hot rolled steel strip or sheet having high tensile strength, low yield ratio and excellent total elongationNIPPON STEEL CORP·Filed 1979·Granted Feb 23, 1982·23 cites·11 claims
- 0680US5370982ASilver halide color photographic light-sensitive materialFUJI PHOTO FILM CO LTD·Filed 1993·Granted Dec 6, 1994·11 cites·5 claims
- 0778US4987008AThin film formation methodSEMICONDUCTOR ENERGY LAB·Filed 1986·Granted Jan 22, 1991·51 cites·6 claims
- 0864US5118597ASilver halide color photographic material containing at least one monodispersed emulsion having a specified particle size distributionFUJI PHOTO FILM CO LTD·Filed 1990·Granted Jun 2, 1992·6 cites·17 claims
- 0961US5466566ASilver halide color photographic materialFUJI PHOTO FILM CO LTD·Filed 1993·Granted Nov 14, 1995·5 cites·5 claims
- 1059US4949004AGas discharge lamp having temperature controlled, liquid reservoir for liquified portion of gasSEMICONDUCTOR ENERGY LAB·Filed 1989·Granted Aug 14, 1990·10 cites·2 claims
- 1157US4313808AElectrodialyzer and method of regenerating waste photographic processing solutionFUJI PHOTO FILM CO LTD·Filed 1980·Granted Feb 2, 1982·20 cites·7 claims
- 1250US4910044AUltraviolet light emitting device and application thereofSEMICONDUCTOR ENERGY LAB·Filed 1988·Granted Mar 20, 1990·11 cites·7 claims
- 1350US2005196549A1Microwave enhanced CVD method and apparatusSEMICONDUCTOR ENERGY LAB·Filed 2005·Application pending·0 cites
- 1441US5036794ACVD apparatusSEMICONDUCTOR ENERGY LAB·Filed 1990·Granted Aug 6, 1991·12 cites·4 claims
- 1536US6677001B1Microwave enhanced CVD method and apparatusSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Jan 13, 2004·5 cites·43 claims
- 1632US4936251AVapor-phase reaction apparatusSEMICONDUCTOR ENERGY LAB·Filed 1985·Granted Jun 26, 1990·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →