Inventor · disambiguated record
Masami Tatsumi
Also filed as: TATSUMI MASAMI
30 granted patents·476 citations·filing 1982–2008
97Inventor score
Top patents by PatentIndex Score
30 records- 0187US6475277B1Group III-V nitride semiconductor growth method and vapor phase growth apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Nov 5, 2002·38 cites·13 claims
- 0285US6136093AMethod of making GaN single crystal and apparatus for making GaN single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Oct 24, 2000·51 cites·10 claims
- 0385US5292487ACzochralski method using a member for intercepting radiation from raw material molten solution and apparatus thereforSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Mar 8, 1994·48 cites·14 claims
- 0482US4563093AVoltage and electric field measuring device using lightSUMITOMO ELECTRIC INDUSTRIES·Filed 1982·Granted Jan 7, 1986·40 cites·7 claims
- 0576US5290395AMethod of and apparatus for preparing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1991·Granted Mar 1, 1994·36 cites·20 claims
- 0675US6572700B2Semiconductor crystal, and method and apparatus of production thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Jun 3, 2003·10 cites·35 claims
- 0773US6007622AMethod of preparing group III-V compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Dec 28, 1999·21 cites·22 claims
- 0871US4595876AOptical voltage and electric field sensorSUMITOMO ELECTRIC INDUSTRIES·Filed 1982·Granted Jun 17, 1986·31 cites·14 claims
- 0970US6866714B2Large size semiconductor crystal with low dislocation densitySUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Mar 15, 2005·10 cites·14 claims
- 1067US5256381AApparatus for growing single crystals of III-V compound semiconductorsSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Oct 26, 1993·18 cites·8 claims
- 1166US7468529B2Porous UV-emitting semiconductor on porous substrate as sterilizing filter made by filtering suspended semiconductor particlesSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Dec 23, 2008·14 cites·32 claims
- 1266US5830269AMethod of preparing group II-VI or III-V compound single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Nov 3, 1998·20 cites·48 claims
- 1365USRE42279EMethod of preparing a compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Apr 12, 2011·0 cites·52 claims
- 1463USRE40662EMethod of preparing a compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Mar 17, 2009·3 cites·72 claims
- 1563US6254677B1Semiconductor crystal, and method and apparatus of production thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Jul 3, 2001·19 cites·5 claims
- 1661US4994437AMethod of manufacturing oxide superconducting films by peritectic reactionSUMITOMO ELECTRIC INDUSTRIES·Filed 1988·Granted Feb 19, 1991·18 cites·12 claims
- 1761US4634490AMethod of monitoring single crystal during growthSUMITOMO ELECTRIC INDUSTRIES·Filed 1984·Granted Jan 6, 1987·18 cites·4 claims
- 1859US5429067ACzochralski method using a member for intercepting radiation from a raw material molten solutionSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Jul 4, 1995·12 cites·18 claims
- 1958US6485563B2Method of preparing a compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Nov 26, 2002·2 cites·42 claims
- 2057USRE41551EMethod of preparing group III-V compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Aug 24, 2010·0 cites·41 claims
- 2157USRE39778EMethod of preparing group III-V compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Aug 21, 2007·2 cites·77 claims
- 2256US4560932AMagneto-optical converter utilizing Faraday effectSUMITOMO ELECTRIC INDUSTRIES·Filed 1983·Granted Dec 24, 1985·15 cites·10 claims
- 2354US4608535AMagnetic field and current measuring device using a Faraday cell with a thin electrically conductive film substantially covering the Faraday cellSUMITOMO ELECTRIC INDUSTRIES·Filed 1982·Granted Aug 26, 1986·12 cites·3 claims
- 2451US5733371AApparatus for growing a single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Mar 31, 1998·15 cites·10 claims
- 2550US6780244B2Method for producing a semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Aug 24, 2004·7 cites·20 claims
- 2642US5145550AProcess and apparatus for growing single crystals of III-V compound semiconductorSUMITOMO ELECTRIC INDUSTRIES·Filed 1987·Granted Sep 8, 1992·6 cites·1 claims
- 2739US6273947B1Method of preparing a compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Aug 14, 2001·3 cites·20 claims
- 2836US4678534AMethod for growing a single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1985·Granted Jul 7, 1987·5 cites·4 claims
- 2932US5951758AMethod and apparatus for the growth of a single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Sep 14, 1999·2 cites·18 claims
- 3030US4603096AHologram recording materialAGENCY IND SCIENCE TECHN·Filed 1984·Granted Jul 29, 1986·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →