Inventor · disambiguated record
Mark Van Dal
Also filed as: VAN DAL MARK · VAN DAL MARK J H
82 granted patents·12 pending applications·1,096 citations·filing 2006–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD69TAIWAN SEMICONDUCTOR MFG8NXP BV6VAN DAL MARK4VELLIANITIS GEORGIOS2
Top patents by PatentIndex Score
94 records- 0199US9520466B2Vertical gate-all-around field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·130 cites·20 claims
- 0299US9214555B2Barrier layer for FinFET channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 15, 2015·591 cites·18 claims
- 0397US9991169B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·15 cites·21 claims
- 0497US9711647B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 18, 2017·13 cites·20 claims
- 0597US9349860B1Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 24, 2016·18 cites·20 claims
- 0697US8766364B2Fin field effect transistor layout for stress optimizationDOORNBOS GERBEN·Filed 2012·Granted Jul 1, 2014·42 cites·20 claims
- 0797US8062963B1Method of fabricating a semiconductor device having an epitaxy regionVAN DAL MARK·Filed 2010·Granted Nov 22, 2011·60 cites·21 claims
- 0896US10756174B2Multiple-stacked semiconductor nanowires and source/drain spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 25, 2020·11 cites·18 claims
- 0996US10453752B2Method of manufacturing a gate-all-around semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·9 cites·17 claims
- 1095US11024548B2Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 1, 2021·6 cites·20 claims
- 1194US10629501B2Gate all-around semiconductor device including a first nanowire structure and a second nanowire structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·9 cites·18 claims
- 1294US10276719B1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·7 cites·20 claims
- 1393US10770358B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·5 cites·20 claims
- 1493US10170378B2Gate all-around semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·8 cites·20 claims
- 1593US9876088B1III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·7 cites·20 claims
- 1693US9761666B2Strained channel field effect transistorVAN DAL MARK·Filed 2011·Granted Sep 12, 2017·10 cites·7 claims
- 1792US9768252B2Vertical gate-all-around field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·6 cites·20 claims
- 1892US8987835B2FinFET with a buried semiconductor material between two finsVELLIANITIS GEORGIOS·Filed 2012·Granted Mar 24, 2015·11 cites·20 claims
- 1992US8823102B2Device with a strained FinTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 2, 2014·14 cites·20 claims
- 2092US8722520B2Method of fabricating a semiconductor device having an epitaxy regionVAN DAL MARK·Filed 2011·Granted May 13, 2014·12 cites·19 claims
- 2190US9472468B2Nanowire CMOS structure and formation methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 18, 2016·10 cites·20 claims
- 2290US9412871B2FinFET with channel backside passivation layer device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·11 cites·15 claims
- 2389US11728222B2Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·1 cites·20 claims
- 2489US10535780B2Semiconductor device including an epitaxial layer wrapping around the nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·5 cites·20 claims
- 2589US8148052B2Double patterning for lithography to increase feature spatial densityVANLEENHOVE ANJA MONIQUE·Filed 2007·Granted Apr 3, 2012·39 cites·17 claims
- 2688US8779554B2MOSFETs with channels on nothing and methods for forming the sameVELLIANITIS GEORGIOS·Filed 2012·Granted Jul 15, 2014·5 cites·18 claims
- 2787US10937908B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 2, 2021·3 cites·20 claims
- 2886US12015083B2Thin-sheet FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·1 cites·20 claims
- 2985US12300550B2Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3085US10475929B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·20 claims
- 3185US9679857B2Semiconductor device and method including an intertial mass elementMERZ MATTHIAS·Filed 2016·Granted Jun 13, 2017·4 cites·11 claims
- 3285US9184233B2Structure and method for defect passivation to reduce junction leakage for finFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·5 cites·20 claims
- 3385US2025254975A1Complementary mos fets vertically arranged and including multiple dielectric layers surrounding the mos fetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3484US11309417B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·2 cites·20 claims
- 3583US11437594B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·1 cites·20 claims
- 3683US8829606B1Ditches near semiconductor fins and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 9, 2014·6 cites·20 claims
- 3783US2025280597A1Semiconductor device having fin structures with unequal channel heights and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3882US10332965B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 25, 2019·2 cites·20 claims
- 3982US2024339537A1Thin-sheet finfet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4081US2023387306A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG COMPNAY LTD·Filed 2023·Application pending·0 cites
- 4180US12317586B2Semiconductor device having fin structures with unequal channel heights and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 4278US12010856B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 4378US11830947B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 4477US8614468B2Mask-less and implant free formation of complementary tunnel field effect transistorsVAN DAL MARK·Filed 2011·Granted Dec 24, 2013·5 cites·20 claims
- 4577US7791140B2Double-gate semiconductor devices having gates with different work functions and methods of manufacture thereofNXP BV·Filed 2007·Granted Sep 7, 2010·5 cites·12 claims
- 4675US11784219B2Method for manufacturing semiconductor device with spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 4775US11682587B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 4875US10510853B2FinFET with two fins on STITAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 4974US10680062B2III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 9, 2020·1 cites·20 claims
- 5074US2022352320A1Strained Channel Field Effect TransistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
Showing the top 50 of 94 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →