Inventor · disambiguated record
Maud Vinet
Also filed as: VINET MAUD
91 granted patents·5 pending applications·888 citations·filing 2003–2022
99Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE60VINET MAUD9IBM7GRENOUILLET LAURENT3ST MICROELECTRONICS INC2
Top patents by PatentIndex Score
96 records- 0198US8013399B2SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustableCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Granted Sep 6, 2011·232 cites·21 claims
- 0296US8853785B2Integrated circuit with electrostatically coupled MOS transistors and method for producing such an integrated circuitAUGENDRE EMMANUEL·Filed 2010·Granted Oct 7, 2014·182 cites·10 claims
- 0395US8183630B2Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VTBATUDE PERRINE·Filed 2009·Granted May 22, 2012·261 cites·19 claims
- 0492US9252208B1Uniaxially-strained FD-SOI finFETST MICROELECTRONICS INC·Filed 2014·Granted Feb 2, 2016·10 cites·20 claims
- 0592US9171757B2Dual shallow trench isolation liner for preventing electrical shortsIBM·Filed 2013·Granted Oct 27, 2015·8 cites·9 claims
- 0691US8703550B2Dual shallow trench isolation liner for preventing electrical shortsDORIS BRUCE B·Filed 2012·Granted Apr 22, 2014·8 cites·11 claims
- 0790US9105691B2Contact isolation scheme for thin buried oxide substrate devicesIBM·Filed 2013·Granted Aug 11, 2015·11 cites·16 claims
- 0888US7829916B2Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Nov 9, 2010·15 cites·18 claims
- 0987US10468436B2Method of manufacturing a LED matrix display deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Nov 5, 2019·5 cites·14 claims
- 1086US10607993B2Quantum device with spin qubitsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Mar 31, 2020·8 cites·17 claims
- 1186US9502292B2Dual shallow trench isolation liner for preventing electrical shortsIBM·Filed 2015·Granted Nov 22, 2016·3 cites·18 claims
- 1286US8969148B2Method for producing a transistor structure with superimposed nanowires and with a surrounding gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 3, 2015·17 cites·10 claims
- 1386US8116118B2Memory cell provided with dual-gate transistors, with independent asymmetric gatesTHOMAS OLIVIER·Filed 2007·Granted Feb 14, 2012·13 cites·15 claims
- 1485US9876121B2Method for making a transistor in a stack of superimposed semiconductor layersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jan 23, 2018·4 cites·15 claims
- 1584US8890219B2UTBB CMOS imager having a diode junction in a photosensitive area thereofCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Nov 18, 2014·3 cites·8 claims
- 1683US11823997B2Chip with bifunctional routing and associated method of manufacturingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Nov 21, 2023·1 cites·12 claims
- 1782US9634103B2CMOS in situ doped flow with independently tunable spacer thicknessCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Apr 25, 2017·5 cites·13 claims
- 1882US9601511B2Low leakage dual STI integrated circuit including FDSOI transistorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 21, 2017·5 cites·14 claims
- 1982US9570465B2Dual STI integrated circuit including FDSOI transistors and method for manufacturing the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Feb 14, 2017·6 cites·15 claims
- 2082US9570340B2Method of etching a crystalline semiconductor material by ion implantation and then chemical etching based on hydrogen chlorideCOMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2013·Granted Feb 14, 2017·5 cites·17 claims
- 2182US9252052B2Dual shallow trench isolation liner for preventing electrical shortsIBM·Filed 2013·Granted Feb 2, 2016·3 cites·18 claims
- 2279US8962399B2Method of making a semiconductor layer having at least two different thicknessesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Feb 24, 2015·4 cites·18 claims
- 2379US8399316B2Method for making asymmetric double-gate transistorsVINET MAUD·Filed 2007·Granted Mar 19, 2013·6 cites·15 claims
- 2477US10903349B2Electronic component with multiple quantum islandsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Jan 26, 2021·2 cites·22 claims
- 2577US9425051B2Method for producing a silicon-germanium film with variable germanium contentCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Aug 23, 2016·3 cites·15 claims
- 2674US9379213B2Method for forming doped areas under transistor spacersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jun 28, 2016·3 cites·16 claims
- 2774US7973350B2Strained-channel transistor deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jul 5, 2011·7 cites·22 claims
- 2872US9136366B2Transistor with coupled gate and ground planeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Sep 15, 2015·3 cites·11 claims
- 2972US7968945B2Microelectronic device provided with transistors coated with a piezoelectric layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 28, 2011·7 cites·15 claims
- 3071US11398593B2Method for producing an electronic component with double quantum dotsCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERG·Filed 2018·Granted Jul 26, 2022·2 cites·10 claims
- 3171US9076732B2Method to prepare semi-conductor device comprising a selective etching of a silicium—germanium layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Jul 7, 2015·2 cites·16 claims
- 3271US7812410B2Suspended-gate MOS transistor with non-volatile operationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Oct 12, 2010·5 cites·24 claims
- 3370US11088259B2Method of manufacturing an electronic component including multiple quantum dotsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Aug 10, 2021·1 cites·14 claims
- 3470US9236478B2Method for manufacturing a fin MOS transistorST MICROELECTRONICS SA·Filed 2014·Granted Jan 12, 2016·2 cites·25 claims
- 3570US7678635B2Method of producing a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Mar 16, 2010·4 cites·14 claims
- 3669US11264479B2Process for producing FET transistorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 1, 2022·2 cites·21 claims
- 3768US9293474B2Dual channel hybrid semiconductor-on-insulator semiconductor devicesIBM·Filed 2015·Granted Mar 22, 2016·1 cites·14 claims
- 3868US7768821B2Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Aug 3, 2010·4 cites·13 claims
- 3968US7713850B2Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precisionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted May 11, 2010·4 cites·18 claims
- 4067US8969966B2Defective P-N junction for backgated fully depleted silicon on insulator MOSFETIBM·Filed 2013·Granted Mar 3, 2015·1 cites·17 claims
- 4166US10679139B2Quantum device comprising FET transistors and qubits co-integrated on the same substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Jun 9, 2020·1 cites·14 claims
- 4266US9337350B2Transistor with reduced parasitic capacitance and access resistance of the source and drain, and method of fabrication of the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted May 10, 2016·2 cites·15 claims
- 4366US9112014B2Transistor with counter-electrode connection amalgamated with the source/drain contactVINET MAUD·Filed 2010·Granted Aug 18, 2015·2 cites·12 claims
- 4466US9059041B2Dual channel hybrid semiconductor-on-insulator semiconductor devicesIBM·Filed 2013·Granted Jun 16, 2015·1 cites·10 claims
- 4566US8115503B2Device for measuring metal/semiconductor contact resistivityVINET MAUD·Filed 2008·Granted Feb 14, 2012·2 cites·19 claims
- 4666US7361592B2Method for producing a component comprising at least one germanium-based element and component obtained by such a methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Apr 22, 2008·3 cites·10 claims
- 4765US9231062B2Method for treating the surface of a silicon substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jan 5, 2016·1 cites·20 claims
- 4864US9711567B2Process for fabricating an integrated circuit cointegrating a FET transistor and an OxRAM memory locationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jul 18, 2017·1 cites·14 claims
- 4963US8021986B2Method for producing a transistor with metallic source and drainCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2010·Granted Sep 20, 2011·2 cites·14 claims
- 5061US8987854B2Microelectronic device with isolation trenches extending under an active areaCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 24, 2015·1 cites·13 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →