Inventor · disambiguated record
Martin Wendel
Also filed as: WENDEL MARTIN · WENDEL MARTIN MAURICE
15 granted patents·1 pending application·266 citations·filing 1972–2017
93Inventor score
Top patents by PatentIndex Score
16 records- 0197US9812438B2Avalanche diode having an enhanced defect concentration level and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 7, 2017·39 cites·21 claims
- 0297US9257523B2Avalanche diode having an enhanced defect concentration level and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 9, 2016·41 cites·18 claims
- 0394US6905892B2Operating method for a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 14, 2005·102 cites·11 claims
- 0487US7875933B2Lateral bipolar transistor with additional ESD implantINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 25, 2011·14 cites·20 claims
- 0586US7709896B2ESD protection device and methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 4, 2010·15 cites·26 claims
- 0682US7087938B2ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 8, 2006·10 cites·17 claims
- 0770US6930501B2Method for determining an ESD/latch-up strength of an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 16, 2005·18 cites·13 claims
- 0866US8791547B2Avalanche diode having an enhanced defect concentration level and method of making the sameSCHNEIDER JENS·Filed 2008·Granted Jul 29, 2014·1 cites·25 claims
- 0961US10756081B2Avalanche diode having an enhanced defect concentration level and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 25, 2020·0 cites·14 claims
- 1056US4009246AManufacture of nitratesDU PONT·Filed 1972·Granted Feb 22, 1977·9 cites·8 claims
- 1155US6559503B2Transistor with ESD protectionINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 6, 2003·7 cites·18 claims
- 1253US7009404B2Method and device for testing the ESD resistance of a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 7, 2006·6 cites·6 claims
- 1350US7359169B2Circuit for protecting integrated circuits against electrostatic dischargesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Apr 15, 2008·4 cites·29 claims
- 1444US8043934B2Methods of use and formation of a lateral bipolar transistor with counter-doped implant regions under collector and/or emitter regionsINFINEON TECHNOLOGIES AG·Filed 2010·Granted Oct 25, 2011·0 cites·28 claims
- 1540US8710590B2Electronic component and a system and method for producing an electronic componentRIESS PHILIPP·Filed 2006·Granted Apr 29, 2014·0 cites·14 claims
- 1637US2005263817A1Transistor comprising fill areas in the source drain and/or drain regionWENDEL MARTIN·Filed 2005·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Martin Wendel files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →