Inventor · disambiguated record
Masaomi Yamaguchi
Also filed as: YAMAGUCHI MASAOMI
9 granted patents·4 pending applications·53 citations·filing 2003–2025
86Inventor score
Top patents by PatentIndex Score
13 records- 0186US7465980B2Ferroelectric memory, multivalent data recording method and multivalent data reading methodFUJITSU LTD·Filed 2005·Granted Dec 16, 2008·16 cites·11 claims
- 0286US7410812B2Manufacture of semiconductor device having insulation film of high dielectric constantFUJITSU LTD·Filed 2005·Granted Aug 12, 2008·12 cites·9 claims
- 0383US7605436B2Manufacture of semiconductor device having insulation film of high dielectric constantFUJITSU LTD·Filed 2008·Granted Oct 20, 2009·8 cites·3 claims
- 0472US7521325B2Semiconductor device and method for fabricating the sameFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 21, 2009·6 cites·12 claims
- 0567US7265401B2Semiconductor device having high dielectric constant gate insulating layer and its manufacture methodFUJITSU LTD·Filed 2005·Granted Sep 4, 2007·4 cites·7 claims
- 0667US2025378245A1Non-transitory computer-readable recording medium, qubit allocation method, and qubit allocation deviceFUJITSU LTD·Filed 2025·Application pending·0 cites
- 0761US7943500B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2008·Granted May 17, 2011·1 cites·16 claims
- 0860US6946351B2Method for fabricating a semiconductor deviceFUJITSU LTD·Filed 2004·Granted Sep 20, 2005·6 cites·9 claims
- 0949US7741684B2Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2005·Granted Jun 22, 2010·0 cites·4 claims
- 1042US2009008724A1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2008·Application pending·0 cites
- 1141US7256145B2Manufacture of semiconductor device having insulation film of high dielectric constantFUJITSU LTD·Filed 2005·Granted Aug 14, 2007·0 cites·21 claims
- 1234US2005142715A1Semiconductor device with high dielectric constant insulator and its manufactureFUJITSU LTD·Filed 2004·Application pending·0 cites
- 1333US2003222316A1Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →