Inventor · disambiguated record
Masashi Yoshimura
Also filed as: YOSHIMURA MASASHI
73 granted patents·20 pending applications·526 citations·filing 1993–2025
99Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES22UNIV OSAKA17PANASONIC HOLDINGS CORP7TAIKO KIKAI IND CO LTD6JAPAN SCIENCE & TECH CORP4
Top patents by PatentIndex Score
93 records- 0191US10586353B2Plant information acquisition system, plant information acquisition device, plant information acquisition method, crop management system and crop management methodMAXELL HOLDINGS LTD·Filed 2016·Granted Mar 10, 2020·6 cites·20 claims
- 0291US5406095ALight emitting diode array and production method of the light emitting diodeVICTOR COMPANY OF JAPAN·Filed 1993·Granted Apr 11, 1995·158 cites·10 claims
- 0390US7948673B2Optical wavelength conversion element having a cesium-lithium-borate crystalUNIV OSAKA·Filed 2008·Granted May 24, 2011·14 cites·9 claims
- 0489US11155931B2Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5UNIV OSAKA·Filed 2020·Granted Oct 26, 2021·2 cites·6 claims
- 0589US9644341B2Motor graderKOMATSU MFG CO LTD·Filed 2013·Granted May 9, 2017·13 cites·11 claims
- 0689US7459023B2Method for producing semiconductor crystalTOYODA GOSEI KK·Filed 2006·Granted Dec 2, 2008·7 cites·20 claims
- 0787US9834859B2Method for producing group III nitride crystal, group III nitride crystal, and semiconductor deviceUNIV OSAKA·Filed 2013·Granted Dec 5, 2017·9 cites·11 claims
- 0885US10927476B2Production method for group III nitride crystalUNIV OSAKA·Filed 2019·Granted Feb 23, 2021·1 cites·11 claims
- 0985US10910511B2Manufacturing method of III-V compound crystal and manufacturing method of semiconductor deviceDISCO CORP·Filed 2018·Granted Feb 2, 2021·2 cites·17 claims
- 1085US7905958B2Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Mar 15, 2011·10 cites·8 claims
- 1184US5767026ASilicon nitride ceramic and process for forming the sameAGENCY IND SCIENCE TECHN·Filed 1995·Granted Jun 16, 1998·56 cites·8 claims
- 1282US2025334719A1Lens unitMAXELL LTD·Filed 2025·Application pending·0 cites
- 1379US7214036B2Screw type vacuum pumpTAIKO KIKAI IND CO LTD·Filed 2001·Granted May 8, 2007·17 cites·14 claims
- 1479US5369065ASilicon nitride sintered body and process for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Nov 29, 1994·32 cites·3 claims
- 1578US12049710B2Group-III nitride substratePANASONIC HOLDINGS CORP·Filed 2023·Granted Jul 30, 2024·0 cites·7 claims
- 1678US11768317B2Lens unit having glass lens, resin lenses, and reflection preventing filmMAXELL LTD·Filed 2018·Granted Sep 26, 2023·2 cites·10 claims
- 1777US12366683B2Lens unit having glass lens and combined resin lensMAXELL LTD·Filed 2023·Granted Jul 22, 2025·0 cites·10 claims
- 1877US8045279B2Molded lens and molding toolHITACHI MAXELL·Filed 2008·Granted Oct 25, 2011·4 cites·12 claims
- 1976US6843849B1Method and apparatus for growing high quality single crystalJAPAN SCIENCE & TECH CORP·Filed 2000·Granted Jan 18, 2005·12 cites·15 claims
- 2076US2024352623A1Group-iii nitride substratePANASONIC HOLDINGS CORP·Filed 2024·Application pending·0 cites
- 2174US11753739B2Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5UNIV OSAKA·Filed 2021·Granted Sep 12, 2023·0 cites·6 claims
- 2271US7008893B2Silicon nitride-based composite sintered body and producing method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Mar 7, 2006·2 cites·4 claims
- 2371US6371744B1Dry screw vacuum pump having spheroidal graphite cast iron rotorsTAIKO KIKAI IND CO LTD·Filed 1998·Granted Apr 16, 2002·21 cites·2 claims
- 2469US2025129514A1Method for producing group iii nitride crystalsPANASONIC HOLDINGS CORP·Filed 2024·Application pending·0 cites
- 2568US8187507B2GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatusMORI YUSUKE·Filed 2007·Granted May 29, 2012·3 cites·12 claims
- 2667US11713517B2Group-III nitride substratePANASONIC CORP·Filed 2020·Granted Aug 1, 2023·0 cites·5 claims
- 2767US10216697B2Management system for skin condition measurement analysis information and management method for skin condition measurement analysis informationMAXELL HOLDINGS LTD·Filed 2017·Granted Feb 26, 2019·1 cites·21 claims
- 2867US10098545B2Lens information management system for surface condition measurement and analysis and information management method for surface condition measurement and analysisMAXELL HOLDINGS LTD·Filed 2014·Granted Oct 16, 2018·2 cites·18 claims
- 2967US9779167B2Management system for skin condition measurement analysis information and management method for skin condition measurement analysis informationHITACHI MAXELL·Filed 2013·Granted Oct 3, 2017·4 cites·45 claims
- 3067US6844282B2Silicon nitride based composite sintered product and method for production thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Jan 18, 2005·6 cites·5 claims
- 3166US8697550B2Method of manufacturing GaN-based filmSATOH ISSEI·Filed 2011·Granted Apr 15, 2014·2 cites·7 claims
- 3265US11396716B2Group-III nitride substrate containing carbon at a surface region thereofUNIV OSAKA·Filed 2019·Granted Jul 26, 2022·0 cites·18 claims
- 3364US9255379B2Motor graderKOMATSU MFG CO LTD·Filed 2013·Granted Feb 9, 2016·3 cites·13 claims
- 3463US10202710B2Process for producing group III nitride crystal and apparatus for producing group III nitride crystalUNIV OSAKA·Filed 2015·Granted Feb 12, 2019·1 cites·12 claims
- 3563US7507292B2Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared therebyOSAKA IND PROMOTION ORG·Filed 2003·Granted Mar 24, 2009·5 cites·24 claims
- 3663US7419448B2Drive belt pulley and belt drive systemBANDO CHEMICAL IND·Filed 2004·Granted Sep 2, 2008·9 cites·7 claims
- 3763US5424256ASilicon nitride sintered bodySUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Jun 13, 1995·17 cites·4 claims
- 3861US11713516B2Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystalPANASONIC CORP·Filed 2021·Granted Aug 1, 2023·0 cites·8 claims
- 3961US11624128B2Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystalPANASONIC CORP·Filed 2021·Granted Apr 11, 2023·0 cites·9 claims
- 4061US8673796B2Spinel light-transmitting window material and method for producing the sameYOSHIMURA MASASHI·Filed 2010·Granted Mar 18, 2014·1 cites·2 claims
- 4159US11879184B2Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substratePANASONIC HOLDINGS CORP·Filed 2022·Granted Jan 23, 2024·0 cites·5 claims
- 4259US7142354B2Wavelength conversion method, wavelength conversion device, and laser beam machineMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 28, 2006·6 cites·20 claims
- 4359US7029528B2Method for flattening surface of oxide crystal to ultra high degreeJAPAN SCIENCE & TECH CORP·Filed 2002·Granted Apr 18, 2006·3 cites·6 claims
- 4458US7387584B2Drive belt pulley and belt drive systemBANDO CHEMICAL IND·Filed 2004·Granted Jun 17, 2008·7 cites·7 claims
- 4557US7348286B2Ceramic composite material and method of its manufactureSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Mar 25, 2008·3 cites·6 claims
- 4657US6911162B2Conductive silicon nitride composite sintered body and a process for the production thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Jun 28, 2005·3 cites·8 claims
- 4756US11859311B2Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)PANASONIC HOLDINGS CORP·Filed 2022·Granted Jan 2, 2024·0 cites·3 claims
- 4856US7288151B2Method of manufacturing group-III nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Oct 30, 2007·2 cites·9 claims
- 4955US11795573B2Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrateUNIV OSAKA·Filed 2021·Granted Oct 24, 2023·0 cites·3 claims
- 5055US7247203B2Process for producing crystalline nucleus and method of screening crystallization conditionsOSAKA IND PROMOTION ORG·Filed 2003·Granted Jul 24, 2007·3 cites·17 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →