Inventor · disambiguated record
Masanobu Zenke
Also filed as: ZENKE MASANOBU
21 granted patents·757 citations·filing 1990–1999
96Inventor score
Top patents by PatentIndex Score
21 records- 0194US5521126AMethod of fabricating semiconductor devicesNEC CORP·Filed 1994·Granted May 28, 1996·210 cites·19 claims
- 0292US5372962AMethod of making a semiconductor integrated circuit device having a capacitor with a porous surface of an electrodeNEC CORP·Filed 1993·Granted Dec 13, 1994·106 cites·20 claims
- 0390US5959326ACapacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentrationNEC CORP·Filed 1997·Granted Sep 28, 1999·88 cites·9 claims
- 0482US6258690B1Method of manufacturing semiconductor deviceNEC CORP·Filed 1997·Granted Jul 10, 2001·66 cites·15 claims
- 0581US6593233B1Semiconductor device and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 1998·Granted Jul 15, 2003·58 cites·32 claims
- 0676US5700710AProcess of fabricating capacitor having waved rough surface of accumulating electrodeNEC CORP·Filed 1995·Granted Dec 23, 1997·40 cites·14 claims
- 0774US5187557ASemiconductor capacitor with a metal nitride film and metal oxide dielectricNEC CORP·Filed 1990·Granted Feb 16, 1993·34 cites·15 claims
- 0867US5956595AMethod of fabricating a semiconductor integrated circuit having a capacitor with lower electrode comprising titanium nitrideNEC CORP·Filed 1997·Granted Sep 21, 1999·26 cites·8 claims
- 0958US5441594AMethod of manufacturing semiconductor deviceNEC CORP·Filed 1993·Granted Aug 15, 1995·28 cites·10 claims
- 1052US6020248AMethod for fabricating semiconductor device having capacitor increased in capacitance by using hemispherical grains without reduction of dopant concentrationNEC CORP·Filed 1998·Granted Feb 1, 2000·13 cites·14 claims
- 1152US5525540AMethod for manufacturing silicon layer having impurity diffusion preventing layerNEC CORP·Filed 1994·Granted Jun 11, 1996·14 cites·26 claims
- 1250US5691229AProcess of fabricating dynamic random access memory cell having inter-level insulating structure without silicon nitride layer between access transistor and storage nodeNEC CORP·Filed 1997·Granted Nov 25, 1997·16 cites·11 claims
- 1349US6146966AProcess for forming a capacitor incorporated in a semiconductor deviceNEC CORP·Filed 1997·Granted Nov 14, 2000·12 cites·6 claims
- 1449US5851581ASemiconductor device fabrication method for preventing tungsten from removingNEC CORP·Filed 1997·Granted Dec 22, 1998·15 cites·12 claims
- 1545US5811333AMethod of roughening a polysilicon layer of a random crystal structure included in a semiconductor deviceNEC CORP·Filed 1996·Granted Sep 22, 1998·11 cites·20 claims
- 1640US5969381ASemiconductor device with unbreakable testing elements for evaluating components and process of fabrication thereofNEC CORP·Filed 1997·Granted Oct 19, 1999·7 cites·7 claims
- 1733US5798569ASemiconductor device having multilayered wiring structureNEC CORP·Filed 1997·Granted Aug 25, 1998·4 cites·2 claims
- 1832US6204076B1Semiconductor device with unbreakable testing elements for evaluating components and process of fabrication thereofNEC CORP·Filed 1999·Granted Mar 20, 2001·2 cites·6 claims
- 1932US5897983AMethod for forming a capacitor in a memory cell in a dynamic random access memory deviceNEC CORP·Filed 1996·Granted Apr 27, 1999·5 cites·8 claims
- 2031US5700738AMethod for producing a semiconductor deviceNEC CORP·Filed 1996·Granted Dec 23, 1997·1 cites·3 claims
- 2129US5843840ASemiconductor device having a wiring layer and method for manufacturing sameNEC CORP·Filed 1996·Granted Dec 1, 1998·1 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →