Inventor · disambiguated record
Md Tofizur Rahman
Also filed as: RAHMAN MD TOFIZUR
16 granted patents·1 pending application·19 citations·filing 2012–2019
88Inventor score
Top patents by PatentIndex Score
17 records- 0192US10340445B2PSTTM device with bottom electrode interface materialINTEL CORP·Filed 2015·Granted Jul 2, 2019·5 cites·16 claims
- 0285US10326075B2PSTTM device with multi-layered filter stackINTEL CORP·Filed 2015·Granted Jun 18, 2019·2 cites·20 claims
- 0382US11374164B2Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memoryINTEL CORP·Filed 2018·Granted Jun 28, 2022·3 cites·21 claims
- 0474US10559744B2Texture breaking layer to decouple bottom electrode from PMTJ deviceINTEL CORP·Filed 2016·Granted Feb 11, 2020·2 cites·17 claims
- 0568US10418415B2Interconnect capping process for integration of MRAM devices and the resulting structuresINTEL CORP·Filed 2016·Granted Sep 17, 2019·1 cites·24 claims
- 0668US9823316B2Magnetic biomedical sensors and sensing system for high-throughput biomolecule testingUNIV MINNESOTA·Filed 2012·Granted Nov 21, 2017·2 cites·14 claims
- 0766US11404630B2Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form sameINTEL CORP·Filed 2016·Granted Aug 2, 2022·2 cites·17 claims
- 0864US10847714B2PSTTM device with multi-layered filter stackINTEL CORP·Filed 2019·Granted Nov 24, 2020·0 cites·20 claims
- 0961US10079266B2Modulation of magnetic properties through implantation and associated structuresINTEL CORP·Filed 2014·Granted Sep 18, 2018·1 cites·9 claims
- 1057US10868233B2Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structuresINTEL CORP·Filed 2016·Granted Dec 15, 2020·1 cites·15 claims
- 1154US11437567B2Perpendicular spin transfer torque magnetic mechanismINTEL CORP·Filed 2016·Granted Sep 6, 2022·0 cites·19 claims
- 1251US10636960B2Strained perpendicular magnetic tunnel junction devicesINTEL CORP·Filed 2015·Granted Apr 28, 2020·0 cites·20 claims
- 1350US11031545B2High stability free layer for perpendicular spin torque transfer memoryINTEL CORP·Filed 2016·Granted Jun 8, 2021·0 cites·16 claims
- 1448US10770651B2Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form sameINTEL CORP·Filed 2016·Granted Sep 8, 2020·0 cites·25 claims
- 1546US10732217B2Ferromagnetic resonance testing of buried magnetic layers of whole waferINTEL CORP·Filed 2016·Granted Aug 4, 2020·0 cites·20 claims
- 1638US10804460B2Device, system and method for improved magnetic anisotropy of a magnetic tunnel junctionRAHMAN MD TOFIZUR·Filed 2016·Granted Oct 13, 2020·0 cites·25 claims
- 1737US2020105324A1Multi-magnet stabilized spin orbit torque mramINTEL CORP·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →