Inventor · disambiguated record
Meng-Sheng Chang
Also filed as: CHANG MENG-SHENG
153 granted patents·97 pending applications·164 citations·filing 2010–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD227DELTA ELECTRONICS INC12AU OPTRONICS CORP4CHANG MENG-SHENG4CHENG HSIAO-CHUNG1
Top patents by PatentIndex Score
250 records- 0199US11094387B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·8 cites·20 claims
- 0298US11950411B2Semiconductor memory devices with dielectric fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·4 cites·20 claims
- 0398US11563015B2Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·6 cites·20 claims
- 0498US11532752B2Non-volatile memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·6 cites·20 claims
- 0598US11410740B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·4 cites·20 claims
- 0698US10971505B1Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·5 cites·20 claims
- 0797US12198785B1Semiconductor memory devices with dielectric fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·2 cites·20 claims
- 0897US11856762B2Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·2 cites·20 claims
- 0997US11626368B2Semiconductor device having fuse array and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 11, 2023·4 cites·20 claims
- 1097US10984878B1One-time programmable memory bit cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·10 cites·20 claims
- 1196US11903188B2Memory devices, semiconductor devices, and methods of operating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 1296US11837300B2Multi-fuse memory cell circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·2 cites·20 claims
- 1396US11756591B2Switches to reduce routing rails of memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·3 cites·17 claims
- 1496US11682433B2Multiple stack high voltage circuit for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·4 cites·6 claims
- 1595US12277990B2Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·2 cites·20 claims
- 1695US12062408B2Switches to reduce routing rails of memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·2 cites·18 claims
- 1795US11856761B2Semiconductor memory devices with different doping typesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·18 claims
- 1895US11756640B2MIM efuse memory devices and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
- 1995US11658114B2Fusible structures and methods of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·3 cites·20 claims
- 2095US11423960B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·3 cites·20 claims
- 2194US11990183B2Memory system with physical unclonable functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 2294US11854616B2Memory including metal rails with balanced loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·18 claims
- 2393US11664081B2Bit selection for power reduction in stacking structure during memory programmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 2493US11018260B2Non-volatile memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·6 cites·20 claims
- 2592US12027204B2Memory including metal rails with balanced loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·1 cites·20 claims
- 2692US11791005B2Memory circuit and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 2792US10163783B1Reduced area efuse cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·12 cites·20 claims
- 2891US11653492B2Memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·2 cites·20 claims
- 2991US11605639B2One-time-programmable memory device including an antifuse structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·20 claims
- 3091US2025364406A1One-time-programmable memory device including an antifuse structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3190US12380959B2Memory device and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 3290US12087378B2Bit selection for power reduction in stacking structure during memory programmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·1 cites·20 claims
- 3390US11443819B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·2 cites·20 claims
- 3490US2025331175A1One-time programmable memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3589US11830827B2Semiconductor memory devices with dielectric fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·1 cites·20 claims
- 3688US12396168B2One-time programmable memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 3788US11501051B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·2 cites·20 claims
- 3888US11176969B2Memory circuit including a first program deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·5 cites·20 claims
- 3988US10923483B2EFuseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·4 cites·20 claims
- 4088US2025364048A1Memory device with physical unclonable function and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4188US2025364066A1Integrated circuit including efuse cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4288US2025329637A1Semiconductor device having fuse array and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4388US2025357854A1Charge pump circuits with backside fly capacitors and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4488US2025308607A1Memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4588US2025316309A1Memory including metal rails with balanced loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4687US12315561B2Semiconductor memory devices with different word linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 4787US12283951B2Voltage provision circuits with core transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·2 cites·20 claims
- 4887US12075614B2MIM memory cell with backside interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·1 cites·19 claims
- 4987US11942155B2Semiconductor memory devices with dielectric fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·1 cites·20 claims
- 5087US11823769B2Reducing capacitive loading of memory system based on switchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·1 cites·20 claims
Showing the top 50 of 250 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →