Inventor · disambiguated record
Meng-Ku Chen
Also filed as: CHEN MENG-KU
16 granted patents·6 pending applications·23 citations·filing 2013–2025
88Inventor score
Top patents by PatentIndex Score
22 records- 0189US8822290B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·12 cites·20 claims
- 0285US12068395B2Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·20 claims
- 0385US2025351404A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0480US9029246B2Methods of forming epitaxial structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 12, 2015·4 cites·20 claims
- 0580US2025351505A1Sin capping on metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0678US9184289B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·3 cites·20 claims
- 0778US2024363729A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0874US11211470B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·1 cites·20 claims
- 0971US2024304679A1Selective sin capping on metal gate for metal oxidation preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1065US9397169B2Epitaxial structuresTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 19, 2016·1 cites·20 claims
- 1161US9166035B2Delta doping layer in MOSFET source/drain regionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·1 cites·18 claims
- 1258US11978641B2Wafer bonding method and semiconductor structure obtained by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 1356US9437699B2Method of forming nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·0 cites·15 claims
- 1456US9224815B2Method of tuning doping concentration in III-V compound semiconductor through co-doping donor and acceptor impuritiesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·0 cites·20 claims
- 1556US2024145302A1Semiconductor device and method for manufacturing interconnecting metal layer thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1654US2024047270A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1753US9735261B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 15, 2017·0 cites·20 claims
- 1852US10923566B2Semiconductor structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 16, 2021·0 cites·19 claims
- 1952US9660031B2Integrated circuit device having III-V compound semiconductor region comprising magnesium and N-type impurity and overlying III-V compound semiconductor layer formed without Cp2Mg precursorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 2052US9356102B2Double stepped semiconductor substrateTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·0 cites·20 claims
- 2151US9099311B2Double stepped semiconductor substrateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 4, 2015·0 cites·19 claims
- 2244US9997397B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 12, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →