Inventor · disambiguated record
Meng-Shao Hsieh
Also filed as: HSIEH MENG-SHAO
1 granted patent·1 pending application·0 citations·filing 2022–2024
13Inventor score
Technology areasH10W
Files withTAIWAN SEMICONDUCTOR MFG CO LTD2
Top patents by PatentIndex Score
2 records- 0167US2025081502A1Method of manufacturing an electronic device employing two-dimensional electron gas with reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0261US12176431B2Electronic device employing two-dimensional electron gas with reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →