Inventor · disambiguated record
Meng-Huan Jao
Also filed as: JAO MENG-HUAN
6 granted patents·14 pending applications·0 citations·filing 2021–2025
67Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20
Top patents by PatentIndex Score
20 records- 0180US12300727B2Process and structure for source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 0280US2025359110A1Semiconductor contact structures and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0379US2025351440A1Wrap-around silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0478US2024379775A1Process and structure for source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0577US2025359134A1Semiconductor device with reverse-cut source/drain contact structure and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0675US2025287643A1Field effect transistor with source/drain contact isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0773US2025292524A1Semiconductor device having a gate contact on a low-k linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0872US11784228B2Process and structure for source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 0969US12501671B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 1069US12349409B2Semiconductor device having a gate contact on a low-k linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 1169US12324188B2Field effect transistor with source/drain contact isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 1268US2024339524A1Semiconductor contact structures and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1367US2024290849A1Wrap-around silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1466US2025210372A1Method for manufacturing semiconductor device using etchant composition having high etching selectivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1563US12266538B2Method for manufacturing semiconductor device using etchant composition having high etching selectivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 1660US2025386547A1Self-aligned isotropic md formation without hard mask on metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1759US2025311302A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1858US2025203990A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1958US2025087578A1Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2051US2024030301A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →