Inventor · disambiguated record
Meng-Wei Kuo
Also filed as: KUO MENG-WEI
10 granted patents·1 pending application·17 citations·filing 2005–2024
83Inventor score
Top patents by PatentIndex Score
11 records- 0186US9780102B2Memory cell pillar including source junction plugMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 3, 2017·4 cites·31 claims
- 0282US10672785B2Integrated structures of vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 2, 2020·3 cites·9 claims
- 0376US12114500B2Integrated structures and methods of forming vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 8, 2024·0 cites·11 claims
- 0472US10515972B2Memory cell pillar including source junction plugMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 24, 2019·1 cites·20 claims
- 0570US7413912B2Microsensor with ferroelectric material and method for fabricating the sameINSTR TECHNOLOGY RES CT NAT AP·Filed 2005·Granted Aug 19, 2008·8 cites·10 claims
- 0669US10622450B2Modified floating gate and dielectric layer geometry in 3D memory arraysINTEL CORP·Filed 2018·Granted Apr 14, 2020·1 cites·15 claims
- 0767US11482534B2Integrated structures and methods of forming vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 25, 2022·0 cites·7 claims
- 0865US11653494B2Memory cell pillar including source junction plugMICRON TECHNOLOGY INC·Filed 2019·Granted May 16, 2023·0 cites·18 claims
- 0963US12484225B2Metal hybrid charge storage structure for memoryIntel NDTM US LLC·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
- 1057US2024355363A1Bit line contact scheme in a memory system stackMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1138US10790290B23D NAND with integral drain-end select gate (SGD)INTEL CORP·Filed 2017·Granted Sep 29, 2020·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →