Inventor · disambiguated record
Meng-Yu Lin
Also filed as: LIN MENG-YU
14 granted patents·10 pending applications·13 citations·filing 2008–2025
87Inventor score
Top patents by PatentIndex Score
24 records- 0195US11569348B2Semiconductor devices and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·4 cites·20 claims
- 0289US11264270B2Air-replaced spacer for self-aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 0382US9859115B2Semiconductor devices comprising 2D-materials and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·3 cites·20 claims
- 0478US2024339355A1Air-Replaced Spacer for Self-Aligned Contact SchemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0577US2025351563A1Complementary field effect transistor with hybrid nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0677US2025359117A1Semiconductor device structure with finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0775US12040222B2Air-replaced spacer for self-aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 0875US12034044B2Semiconductor devices and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·19 claims
- 0975US10269902B2Semiconductor device and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·1 cites·20 claims
- 1075US2025366104A1Complementary field effect transistor with conductive through substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1174US2025299959A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1271US12334350B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 1366US9525072B2Semiconductor device and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 20, 2016·1 cites·20 claims
- 1463US11171212B2Semiconductor device and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·0 cites·20 claims
- 1562US12432954B2Semiconductor device structure with fin and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 1662US2024072115A1Complementary field effect transistor with conductive through substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1760US7600416B2Apparatus for measuring surface tensionLIN LI-HUA·Filed 2008·Granted Oct 13, 2009·2 cites·9 claims
- 1857US9853105B2Semiconductor device and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·0 cites·20 claims
- 1954US10157737B2Semiconductor devices comprising 2D-materials and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 2054US2024429279A1Biaxial oxide direction complementary field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2152US2024186323A1Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2250US2013266739A1Process for forming carbon film or inorganic material film on substrate by physical vapor depositionLIN SHIH-YEN·Filed 2012·Application pending·0 cites
- 2349US2024072136A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2448US9029190B2Method for manufacturing graphene film and graphene channel of transistorACADEMIA SINICA·Filed 2013·Granted May 12, 2015·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →