Inventor · disambiguated record
Meng-Han Lin
Also filed as: LIN MENG-HAN
250 granted patents·111 pending applications·231 citations·filing 2015–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD347POWERCHIP SEMICONDUCTOR MFG CORP7TAIWAN SEMICONDUCTOR MANFUACTURING COMPANY LTD3IND TECH RES INST1INST OF ENV SCIENCE AND RES LTD1
Top patents by PatentIndex Score
361 records- 0199US11696449B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·4 cites·17 claims
- 0299US11587823B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·9 cites·20 claims
- 0399US11581337B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·7 cites·15 claims
- 0499US11495618B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·5 cites·20 claims
- 0599US11423966B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·23 cites·20 claims
- 0699US11404091B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·17 cites·20 claims
- 0799US11404099B1Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·9 cites·20 claims
- 0899US11355516B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·11 cites·20 claims
- 0998US11864393B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·2 cites·20 claims
- 1098US11776602B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·6 cites·20 claims
- 1198US11729997B23D stackable memory and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·4 cites·20 claims
- 1298US11647634B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 9, 2023·4 cites·20 claims
- 1398US11581368B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·19 claims
- 1498US11527553B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
- 1598US11417739B2Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 16, 2022·5 cites·20 claims
- 1697US11903216B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 1797US11647636B2Memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·3 cites·20 claims
- 1897US10468410B2Metal gate modulation to improve kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·13 cites·20 claims
- 1996US12002534B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 2096US12002499B2Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 2196US11910616B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 2296US11869971B2Multi-bit memory storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
- 2396US11854914B2Systems and methods of testing memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·17 claims
- 2496US11848381B2Methods of operating multi-bit memory storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
- 2596US11805652B23D RAM SL/BL contact modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·2 cites·20 claims
- 2696US11744080B2Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 29, 2023·3 cites·20 claims
- 2796US11532746B2Multi-bit memory storage device and method of operating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·5 cites·20 claims
- 2896US11355551B2Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·3 cites·20 claims
- 2995US11864381B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 3095US11854823B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 3195US11810959B2Transistor layout to reduce kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·2 cites·20 claims
- 3295US11758717B2Semiconductor memory devices with one-sided staircase profiles and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
- 3394US12027412B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·1 cites·20 claims
- 3493US11963363B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·15 claims
- 3592US11869888B2Polysilicon resistor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·1 cites·20 claims
- 3692US10741555B2Metal gate modulation to improve kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·4 cites·20 claims
- 3792US2025364028A1Using split word lines and switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3892US2025365971A1Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3991US11574929B23D ferroelectric memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·20 claims
- 4091US11569264B23D RAM SL/BL contact modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
- 4191US11063044B2Metal gate modulation to improve kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·2 cites·20 claims
- 4291US10998315B2Metal gate modulation to improve kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 4, 2021·2 cites·20 claims
- 4391US10971590B2Transistor layout to reduce kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
- 4491US10937879B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 2, 2021·4 cites·20 claims
- 4590US10510855B2Transistor layout to reduce kink effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·4 cites·20 claims
- 4690US9887302B2Schottky barrier diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·6 cites·20 claims
- 4789US11217629B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·20 claims
- 4889US2025365974A1Memory device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4989US2025331189A1Three-dimensional memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5088US11980035B2Three-dimensional memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·1 cites·20 claims
Showing the top 50 of 361 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →