Inventor · disambiguated record

Mei-Yun Wang

Also filed as: WANG MEI-YUN

212 granted patents·67 pending applications·650 citations·filing 1998–2025

99Inventor score

Technology areasH10P H10W H10D H01L A61H

Files withTAIWAN SEMICONDUCTOR MFG CO LTD236 TAIWAN SEMICONDUCTOR MFG32 WANG MEI-YUN3 LIN CHEN-TUNG2 IND TECH RES INST1

Top patents by PatentIndex Score

279 records

0198US12068200B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·5 cites·20 claims
0298US11615987B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
0397US11961886B2Semiconductor structure with conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·3 cites·20 claims
0497US11527614B2Semiconductor structure with conductive structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·4 cites·20 claims
0597US11362003B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·4 cites·20 claims
0697US11302802B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·4 cites·20 claims
0797US11276643B2Semiconductor device with backside spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·5 cites·20 claims
0897US11189525B2Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·7 cites·20 claims
0997US10177038B1Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 8, 2019·17 cites·20 claims
1097US9685439B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·16 cites·20 claims
1197US9647116B1Method for fabricating self-aligned contact in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·19 cites·20 claims
1296US12068378B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·2 cites·20 claims
1396US11855169B2Silicide structures in transistors and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
1496US11784222B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
1596US11532561B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
1696US11450572B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
1796US10923573B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·8 cites·20 claims
1896US10121675B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 6, 2018·10 cites·20 claims
1995US11935932B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
2095US11876135B2Epitaxial source/drain structures for multigate devices and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 16, 2024·2 cites·20 claims
2195US11244832B2Semiconductor structure with mask structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
2295US10504990B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
2394US12464806B2Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·1 cites·20 claims
2494US11791387B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
2594US10825737B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·7 cites·20 claims
2693US12057392B2Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
2793US11728394B2Method of forming backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
2893US10490459B2Method for source/drain contact formation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·6 cites·20 claims
2992US11569364B2Silicide backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
3092US11387331B2Source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·19 claims
3192US10943818B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·6 cites·20 claims
3292US10930564B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·7 cites·20 claims
3392US9653594B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·7 cites·20 claims
3492US2025357210A1Methods For Reducing Contact Depth Variation In Semiconductor FabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3591US9779984B1Method of forming trenches with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
3691US9437495B2Mask-less dual silicide processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·13 cites·20 claims
3790US11289383B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
3890US2025359213A1Semiconductor transistor structure with nanostructures and conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3989US12266703B2Dielectric structures for semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·1 cites·20 claims
4089US12176435B2Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·1 cites·20 claims
4189US11322394B2Contact formation method and related structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
4289US11037924B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 15, 2021·4 cites·20 claims
4388US12009363B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·1 cites·20 claims
4488US10475788B2Fin field effect transistor (FinFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·20 claims
4588US10418453B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·3 cites·20 claims
4687US12419102B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
4787US9331173B2Semiconductor device having a carbon containing insulation layer formed under the source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 3, 2016·5 cites·20 claims
4887US2025359137A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4986US12376277B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
5086US12342598B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims

Showing the top 50 of 279 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →