Inventor · disambiguated record
Meiyin Yang
Also filed as: YANG MEIYIN
7 granted patents·2 pending applications·7 citations·filing 2016–2024
73Inventor score
Files withINST OF MICROELECTRONICS CAS7BEIJING SUPERSTRING ACADEMY OF MEMORY TECH1INST SEMICONDUCTORS CAS1
Top patents by PatentIndex Score
9 records- 0189US10700124B1Spin-orbit torque magnetoresistive random access memory and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2019·Granted Jun 30, 2020·5 cites·12 claims
- 0275US10978121B2Voltage control magnetic random storage unit, memory and logic device composed therebyINST SEMICONDUCTORS CAS·Filed 2016·Granted Apr 13, 2021·2 cites·10 claims
- 0364US12366593B2Spin hall device, method for obtaining hall voltage, and max pooling methodINST OF MICROELECTRONICS CAS·Filed 2022·Granted Jul 22, 2025·0 cites·12 claims
- 0462US12198746B2In-memory computing unit and in-memory computing circuit having reconfigurable logicINST OF MICROELECTRONICS CAS·Filed 2022·Granted Jan 14, 2025·0 cites·18 claims
- 0559US2025228137A1Sot-mram memory cell and method of manufacturing sot-mram memory cellBEIJING SUPERSTRING ACADEMY OF MEMORY TECH·Filed 2024·Application pending·0 cites
- 0655US10756256B2Magnetoresistive random access memory and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2019·Granted Aug 25, 2020·0 cites·12 claims
- 0748US11930720B2Voltage control of SOT-MRAM for deterministic writingINST OF MICROELECTRONICS CAS·Filed 2021·Granted Mar 12, 2024·0 cites·19 claims
- 0847US10991877B2Multi-state memory and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2019·Granted Apr 27, 2021·0 cites·11 claims
- 0936US2020152252A1Spin-orbit torque magnetoresistive randon access memory and method and apparatus for writing the sameINST OF MICROELECTRONICS CAS·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →